Film thickness effects on the fracture of tantalum nitride on aluminum nitride thin film systems

Moody, N. R.; Medlin, Douglas L.; Boehme, D.R.; Norwood, D. P.

doi:10.1016/s0013-7944(98)00055-1

Cited by 23 publications

(15 citation statements)

References 25 publications

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“…This is also in contrast to existing studies on brittle thin films on substrates, where no distinct change in fracture toughness 35,36 or decreasing fracture toughness with increasing film thickness 15 ). 19 This clearly shows the need to include the stress relaxation by plastic deformation in the analysis of the fracture toughness.…”

Section: Fracture Toughness Analysis Including Plasticitycontrasting

confidence: 98%

Brittle-to-ductile transition in ultrathin Ta/Cu film systems

2009

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Current semiconductor technology demands the use of compliant substrates for flexible integrated circuits. However, the maximum total strain of such devices is often limited by the extensibility of the metallic components. Although cracking in thin films is extensively studied theoretically, little experimental work has been carried out thus far.Here, we present a systematic study of the cracking behavior of 34 to 506 nm thick Cu films on polyimide with 3.5 to 19 nm-thick Ta interlayers. The film systems have been investigated by a synchrotron-based tensile testing technique and in situ tensile tests in a scanning electron microscope. By relating the energy release during cracking obtained from the stress-strain curves to the crack area, the fracture toughness of the Cu films can be obtained. It increases with Cu film thickness and decreases with increasing Ta film thickness. Films thinner than 70 nm exhibit brittle fracture, indicating an increasing inherent brittleness of the Cu films.

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Section: Fracture Toughness Analysis Including Plasticitycontrasting

confidence: 98%

Brittle-to-ductile transition in ultrathin Ta/Cu film systems

2009

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“…Residual stress is a longstanding concern in the thin film community, and f ranging from 0.5 to 5.5 GPa has been reported for h f ≤ 500 nm for Cu, Ni, Ti, Cr, Mo, Ta, TiN, cubic BN, and Ta 2 N films [ [37][38][39][40][41][42][43]. f from 3-5.5 GPa was directly verified using X-ray diffraction measurements [40,42].…”

Section: Introductionmentioning

confidence: 95%

Thermo-mechanical properties of alumina films created using the atomic layer deposition technique

Miller

Foster

Jen

et al. 2010

Sensors and Actuators A: Physical

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“…Using Eqs. [3] through [9], the driving stress, critical buckling stress, phase angle, and mode I fracture energy for the current system were 3.1 GPa, 0.13 GPa, -90 deg, and 0.6 J/m 2 , respectively. Due to the small number of buckles used, the Wilcoxon Signed Rank test [23] was used to verify all of the samples representing the same population with a symmetric probability about a median value.…”

Section: Resultsmentioning

confidence: 75%

“…There have been many different techniques developed to measure adhesion in order to predict the reliability of these film systems. Recently, many research groups concerned with adhesion have begun using quantitative measuring techniques, including stressed overlayers, [1][2][3][4][5][6] nanoindentation-induced delamination, [4,5] scratch testing, [1][2][3][4][5][6][7][8][9] and four-point bending. [10,11,12] These quantitative methods compare the applied strain energy release rate, G, and the resistance to crack propagation (the interfacial fracture toughness, G).…”

Section: Introductionmentioning

confidence: 99%

The Effect of Nonuniform Chemistry on Interfacial Fracture Toughness

Kennedy

Bahr

Moody

2007

Metall Mater Trans A

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The adhesion of metallic-ceramic interfaces is generally ascribed to the mixture of several mechanisms, including chemical bonding, texture, strain transfer, and plasticity. This study examines the impact of alterations in chemical bonding along an interface on the nanometer scale on the interfacial fracture energy. Using a well-characterized system of W/SiO 2 , small areas of the interface were masked with polymer tubes to prohibit the area from adhering well to the W film. This showed that the interfacial fracture energy was proportional to the area of higher adhesion. This finding was then used to study the growth of a Ti interlayer used for adhesion promotion in a Pt/SiO 2 system. Because the adhesion energy slowly grew from values near the Pt/SiO 2 to values typical of Ti/SiO 2 , the growth mechanism for DC magnetron sputtering of thin film Ti on SiO 2 was inferred to be island growth instead of layer-by-layer growth.

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Film thickness effects on the fracture of tantalum nitride on aluminum nitride thin film systems

Cited by 23 publications

References 25 publications

Brittle-to-ductile transition in ultrathin Ta/Cu film systems

Brittle-to-ductile transition in ultrathin Ta/Cu film systems

Thermo-mechanical properties of alumina films created using the atomic layer deposition technique

The Effect of Nonuniform Chemistry on Interfacial Fracture Toughness

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