Films of immiscible systems obtained by three-electrode ion-plasma sputtering

Preparation of Fe-Si-B-(Cu,Nb,Ni,Mo) films by quenching from a vapor state

“…For this method, at an accelerating voltage of 2 kV, it is theoretically predicted that the kinetic energy of the deposited atoms changes from 100 to 200 eV by lowering the pressure of the plasma-generating gas from 0.053 to 0.016 Pa [13]. Moreover, this method demonstrated the ability to produce uniform films of immiscible binary metal systems [10,12]. The targets for film deposition were rapidly cooled ribbons of the same composition, obtained by quenching from a liquid state.…”

“…The transition from bulk materials to films makes it possible to place up to 100 million elements in 1 cm 3 . By improving the production methods of such materials and changing the deposition conditions (substrate temperature, flux density, composition of residual gases), it is possible to purposefully influence the structure of films in a very wide range [9,10]. The structural characteristics of thin films are closely related to the kinetics of condensate formation and secondary processes occurring during and after deposition [11].…”

The effect of Ag additives on the structure of Fe-Pt films

“…Non-equilibrium conditions for obtaining a material make it possible to overcome the influence of the positive heat of mixing and obtain a new class of materials based on immiscible components. To date, quite a lot of single-phase alloys have already been obtained in such systems by various methods [7][8][9][10][11][12][13][14]. In the case of ion-plasma sputtering of atoms, the effective energy relaxation rate, according to theoretical estimates, reaches 10 12 -10 14 K/s [15].…”