Films thickness effect on structural and optoelectronic properties of hydrogenated amorphous germanium (a-Ge:H)

Belfedal, A.; Bouizem, Y.; Sib, J.D.; Chahed, L.

doi:10.1016/j.jnoncrysol.2012.03.019

Cited by 6 publications

(6 citation statements)

References 28 publications

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“…Therefore, the number of ions being sputtered is lower on the glass substrate in the chamber. This consequently causes the Ge thin lm thickness to decrease as the gas pressure increases, which is similar to the reports of the previous works cited in the literature [14][15][16].…”

Section: Thickness Measurementssupporting

confidence: 90%

“…Belfedal et al reported that a high deposition rate with of the material is due to the plasma discharge at high RF power in the sputtering system. Within that system, the energy is more e ciently coupled to the plasma through the bulk electrons that gain energy from the electrical eld generated between the electrodes [14]. The energy gain at high RF power increases the kinetic energy of the ions allowing ions to bombard more on the glass substrate and increasing the thin lm thickness.…”

Section: Thickness Measurementsmentioning

confidence: 99%

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Influence of Gas Pressure and RF Power on the Structural and Mechanical Properties of Germanium thin Films

Ariffin

Mustaffa

Tamchek

et al. 2021

Preprint

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Germanium thin film was deposited on a glass substrate by radio frequency magnetron sputtering technique toward nanowires growth for solar cell application. Germanium thin films were deposited at room temperature. The gas pressures and radiofrequency power were varied from 50 to 100 Watt and 5 to 15 mTorr, respectively, with constant deposition time. The thickness of the deposited thin film was investigated using a high surface profilometer. Meanwhile, its structural properties were characterized using atomic force microscopy technique. Results showed that the surface roughness of the Germanium thin film decreased with the increase of gas pressure and radio frequency power. All the thin films formed were amorphous which were confirmed with X-ray diffraction analysis. The experiment results indicated that thin films deposit at 15 mTorr produced 114.76 nm of thickness and 61.9 nm of surface roughness. Meanwhile, Ge thin film deposited at 100-Watt radio frequency power had 10.2 nm of surface roughness. Therefore, growth parameters must be optimized in order to obtain the desired surface roughness which then can be used for the growth of nanowires for solar cell application.

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Section: Thickness Measurementssupporting

confidence: 90%

Section: Thickness Measurementsmentioning

confidence: 99%

Influence of Gas Pressure and RF Power on the Structural and Mechanical Properties of Germanium thin Films

Ariffin

Mustaffa

Tamchek

et al. 2021

Preprint

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“…The Ge atom is slightly larger and remarkably heavier compared to Si atom, thus changing growth, structure, and consequently electronic properties of Si-Ge:H and Ge:H films. To compensate this, several approaches have been made, such as ion bombardment [21], thickness optimization [22], and hydrogen dilution [23]. Nanostructured high Ge-content GeSi:H films have been studied in [10] (Figure 1).…”

Section: Fabrication and Electronic Properties Of Plasma Deposited Anmentioning

confidence: 99%

Hybrid Silicon-Organic Heterojunction Structures for Photovoltaic Applications

Kosarev¹,

Cosme²,

Mansurova³

et al. 2017

Optoelectronics - Advanced Device Structures

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The concept for inorganic-organic device is an attractive technology to develop devices with better characteristics and functionality due to the complementary advantages of inorganic and organic materials. This chapter provides an overview of the principal requirements for organic and inorganic semiconductor properties and their fabrication processes and focus on the compatibility between low temperature plasma enhanced chemical vapor deposition (PECVD) and polymer organic materials deposition. The concept for inorganic-organic device was validated with the fabrication of three hybrid thin film photovoltaic structures, based on hydrogenated silicon (Si:H), organic poly(3-hexythiophene): methano-fullerenephenyl-C61-butyric-acid-methyl-ester (P3HT:PCBM), and poly(3,4 ethylenedioxythiophene): poly(4-styrenesulfonate) (PEDOT:PSS) films. Optoelectronic characteristics, performance characteristics, and interfaces of the different configurations aspects are discussed. Hybrid ITO/PEDOT:PSS/(i)Si:H/(n)Si:H structure results in a remarkably high short circuit current density as large as 17.74 mA/cm 2 , which is higher than the values in organic or inorganic reference samples. Although some hybrid structures demonstrated substantial improvement of performance, other hybrid structures showed poor performance, further R&D efforts seem to be promising, and should be focused on deeper study of organic materials and related interface properties.

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“…As key materials in solar cells, tetrahedral amorphous semiconductors [amorphous germanium (a-Ge), amorphous silicon (a-Si)] have attracted renewed interest among researchers owing to their low manufacturing cost and higher efficiencies (Belfedal et al, 2012). As key materials in solar cells, tetrahedral amorphous semiconductors [amorphous germanium (a-Ge), amorphous silicon (a-Si)] have attracted renewed interest among researchers owing to their low manufacturing cost and higher efficiencies (Belfedal et al, 2012).…”

Section: Introductionmentioning

confidence: 99%

“…In order to meet the challenge of the serious global energy crisis, many scientists are focusing on solar cells with high conversion efficiency. As key materials in solar cells, tetrahedral amorphous semiconductors [amorphous germanium (a-Ge), amorphous silicon (a-Si)] have attracted renewed interest among researchers owing to their low manufacturing cost and higher efficiencies (Belfedal et al, 2012).…”

Section: Introductionmentioning

confidence: 99%

Detection of medium-range-order structure in amorphous germanium films by spectroscopic ellipsometry

et al. 2015

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Films thickness effect on structural and optoelectronic properties of hydrogenated amorphous germanium (a-Ge:H)

Cited by 6 publications

References 28 publications

Influence of Gas Pressure and RF Power on the Structural and Mechanical Properties of Germanium thin Films

Influence of Gas Pressure and RF Power on the Structural and Mechanical Properties of Germanium thin Films

Hybrid Silicon-Organic Heterojunction Structures for Photovoltaic Applications

Detection of medium-range-order structure in amorphous germanium films by spectroscopic ellipsometry

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