Filter Design

Bowick, Christopher; Blyler, John; Ajluni, C.

doi:10.1016/b978-075068518-4.50005-9

Cited by 3 publications

(4 citation statements)

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“…For instance, when an inductor is added in series with the capacitive device, electrical resonance is achieved at the frequency where the impedance of the inductor (Z L = j ω L ) matches the impedance of the capacitive component of the device ( Z C = 1/( j ω C device )). At the resonance point of this tuned resistor–inductor–capacitor ( RLC ) resonator (i.e., at ), the reactive impedances of the inductor and capacitor cancel out and the total impedance only reflects resistive components of the impedance of the components . The resonance frequency can be additionally tuned by adding more reactive elements to the driving scheme such as a capacitor C p in parallel with the device.…”

Section: Resultsmentioning

confidence: 99%

A Resonantly Driven, Electroluminescent Metal Oxide Semiconductor Capacitor with High Power Efficiency

Wang

Javey

2021

ACS Nano

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Electroluminescence can be generated from a wide variety of emissive materials using a simple, generic device structure. In such a device, emissive materials are deposited by various means on a metal oxide semiconductor capacitor structure across which alternating current voltage is applied. However, these devices suffer from low external efficiencies and require the application of high voltages, thus hindering their practical usage and raising questions about the possible efficiencies that can be achieved using alternating current driving schemes in which injection of bipolar charges does not occur simultaneously. We show that appropriately chosen reactive electrical components can be leveraged to generate passive voltage gain across the device, allowing operation at input voltages below 1 V for devices across a range of gate oxide thicknesses. Furthermore, high power efficiencies are observed when using thermally activated delayed fluorescence emitters deposited by a single thermal evaporation step, suggesting that the efficiency of a light-emitting device with simplified structure can be high.

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Section: Resultsmentioning

confidence: 99%

A Resonantly Driven, Electroluminescent Metal Oxide Semiconductor Capacitor with High Power Efficiency

Wang

Javey

2021

ACS Nano

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“…The Chebyshev filter also required a seventh-order structure, with a cut-off frequency of approximately 19 GHz (as it has a sharper roll-off), and estimated ripple of 0.01 dB within the pass-band. The ratio of ω / ω c [11] to achieve attenuation of approximately 100 dB at 60 GHz relates to a value of 3.5 (taking into account the ripple). The attenuation achieved at 60 GHz is equal to 96.81 dB for the Chebyshev filter using these parameters.…”

Section: Mechanism Descriptionsmentioning

confidence: 99%

“…A dipole antenna with 180° separation was connected to each filter, and the theoretical (and simulated) impedance seen by the filter equals 73 Ω; therefore R L = 73 Ω. The element values C n and L n obtained in [11] were de-normalized to determine the component values C and L by C = C n /2π f c R L and L = L n R L /2π f c .…”

Section: Mechanism Descriptionsmentioning

confidence: 99%

Estimation of signal attenuation in the 60 GHZ band with an analog BiCMOS passive filter

Lambrechts

Sinha

2014

Int. J. Microw. Wireless Technol.

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Prediction of millimeter(mm)-wave radio signals can be beneficial in recreating and repeating atmospheric conditions in a controlled, laboratory environment. A path-loss model has been proposed that accounts for free-space losses, oxygen absorption, reflection and diffraction losses, and rain-rate attenuation at mm-wave frequencies. Two variable passive low-pass-integrated circuit filter structures for attenuation in the 57–64 GHz unlicensed frequency band have been proposed, designed, simulated, prototyped in a 130-nm SiGe bipolar complementary metal-oxide semiconductor process, and measured. The filters are based on the Butterworth and Chebyshev low-pass filter topologies and investigate the possibility of using the structures to perform amplitude attenuation of mm-wave frequencies over a short distance. Both filters are designed and matched for direct coupling with equivalent circuit models of dipole antennas operating in this frequency band. Full integration therefore allows prediction of atmospheric losses on an analog, real-time, basis without the requirement of down-converting (sampling) to analyze high-frequency signals through a digital architecture. On-wafer probe measurements were performed to limit parasitic interference from bonding wires and enclosed packaging.

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“…Alternatively, gallium arsenide and other advanced III–V materials allow MMICs to be applied in the millimeter wavelength region with increased functional capability, improved system reliability, and reduced weight, volume, and cost [ 9 ]. The major drawback of this technology is that the circuits can yield performance results for certain parameters that are worse than those observed from the same devices made with separate components [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

A High-Frequency-Compatible Miniaturized Bandpass Filter with Air-Bridge Structures Using GaAs-Based Integrated Passive Device Technology

et al. 2018

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This paper reports on the use of gallium arsenide-based integrated passive device technology for the implementation of a miniaturized bandpass filter that incorporates an intertwined circle-shaped spiral inductor and an integrated center-located capacitor. Air-bridge structures were introduced to the outer inductor and inner capacitor for the purpose of space-saving, thereby yielding a filter with an overall chip area of 1178 μm × 970 μm. Thus, not only is the chip area minimized, but the magnitude of return loss is also improved as a result of selective variation of bridge capacitance. The proposed device possesses a single passband with a central frequency of 1.71 GHz (return loss: 32.1 dB), and a wide fractional bandwidth (FBW) of 66.63% (insertion loss: 0.50 dB). One transmission zero with an amplitude of 43.42 dB was obtained on the right side of the passband at 4.48 GHz. Owing to its miniaturized chip size, wide FBW, good out-band suppression, and ability to yield high-quality signals, the fabricated bandpass filter can be implemented in various L-band applications such as mobile services, satellite navigation, telecommunications, and aircraft surveillance.

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Filter Design

Cited by 3 publications

References 0 publications

A Resonantly Driven, Electroluminescent Metal Oxide Semiconductor Capacitor with High Power Efficiency

A Resonantly Driven, Electroluminescent Metal Oxide Semiconductor Capacitor with High Power Efficiency

Estimation of signal attenuation in the 60 GHZ band with an analog BiCMOS passive filter

A High-Frequency-Compatible Miniaturized Bandpass Filter with Air-Bridge Structures Using GaAs-Based Integrated Passive Device Technology

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