Filter integration using on-chip transformers

Aly, Arafa H.; Beishline, D.W.; El-Sharawy, Badawy

doi:10.1109/mwsym.2004.1338998

Cited by 9 publications

(4 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Unfortunately, these filters lead to neither single-chip integration nor SoC solutions. For the purpose of monolithic SoC integration, silicon-based RF filtering passives have been proposed, which construct the filters using SiGe/ BiCMOS with Al/Cu metallization [96], realize the filter design with on-chip transformers [97] on the CMOS substrate, build the filters with wire-bond inductors for suppressing receiver interference [98], or configure the filters with micromachined silver components [99]. By now, very few reports have demonstrated the use of silicon-based filters for multi-GHz or higher frequency-band applications, which is mainly due to the higher loss associated with the conductive CMOS substrate.…”

Section: Tunable Tanks and Passive Filtersmentioning

confidence: 99%

Micromachined high-performance RF passives in CMOS substrate

et al. 2016

J. Micromech. Microeng.

View full text Add to dashboard Cite

This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications.

show abstract

Section: Tunable Tanks and Passive Filtersmentioning

confidence: 99%

Micromachined high-performance RF passives in CMOS substrate

et al. 2016

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

“…As the frequency demands, filters have been constructed using the ubiquitous operational amplifier (opamp), Gm-C blocks [1], and at gigahertz frequencies micro-strip and resonator filters [2,3]. Previously, filter design was advanced by on-chip complementary metal-oxide semiconductor spiral inductors and transformers, albeit with low Qs and requiring comparatively large chip areas making the design of passive and/or active filters all the more attractive [4][5][6]. The advantage of Gm-C filters is that any order filter can be constructed from a passive lowpass prototype.…”

Section: Introductionmentioning

confidence: 99%

“…Several transconductance blocks are typically needed, while the number of capacitors used is low. Previously, filter design was advanced by on-chip complementary metal-oxide semiconductor spiral inductors and transformers, albeit with low Qs and requiring comparatively large chip areas making the design of passive and/or active filters all the more attractive [4][5][6]. Recently, in the work of [7], single transistor filters were studied and classified.…”

Section: Introductionmentioning

confidence: 99%

On a class of cross coupled fully differential filters

Maundy

Elwakil

Gift

2015

Circuit Theory & Apps

View full text Add to dashboard Cite

In this paper, a class of cross-coupled differential filters is presented. The filters implemented are second order, using two transistors cross-coupled surrounded by passive RLC components. The input of each filter is differential and so is its output. Biasing of each filter is straightforward, and the stability of the filters is examined. Several of the filters were built experimentally using discrete components and simulated using SPICE in a 0.18 μm Taiwan Semiconductor Manufacturing Company (TSMC) complementary metal-oxide semiconductor (CMOS) process, confirming the validity of the filters.

show abstract

“…The high performance and low cost, on-chip transformers have been widely used in CMOS (BiCMOS) radio-frequency integrated circuits (RFICs), such as RF differential LNA, preamplifiers, mixers, voltage-controlled oscillators and power amplifiers [1]- [4]. In these circuits, they are often implemented for impedance transformation, dc isolation, signal coupling, phase splitting and other purpose.…”

Section: Introductionmentioning

confidence: 99%

A high self-resonant and quality factor transformer using novel geometry for silicon based RFICs

Zhang

Cai

et al. 2013

2013 IEEE International Conference of Electron Devices and Solid-State Circuits

View full text Add to dashboard Cite

A novel 24-sided concave-convex geometry monolithic transformer that has high self-resonant frequency and quality factor is presented. It is implemented with the top level thick Cu metal and multiple geometrical structures in 0.13 um CMOS mixed-signal 1P6M salicide back-end process. Compared to those with conventional square, hexagonal and octagonal geometry structure, the novel transformer achieves better quality factor, self-resonant frequency and less chip area. The simulation results show that 1.12, 1 and 0.58 GHz improvements in SRF, and 2.4, 0.9 and 0.3 enhancements in quality factor are obtained respectively when compared to typical square, hexagonal and octagonal transformer with the same inductance of the primary and secondary winding.

show abstract

Filter integration using on-chip transformers

Cited by 9 publications

References 7 publications

Micromachined high-performance RF passives in CMOS substrate

Micromachined high-performance RF passives in CMOS substrate

On a class of cross coupled fully differential filters

A high self-resonant and quality factor transformer using novel geometry for silicon based RFICs

Contact Info

Product

Resources

About