Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films

Tucker, Mark; Czigány, Zsolt; Broitman, Esteban; Näslund, Lars-Åke; Hultman, Lars; Rosén, Johanna

doi:10.1063/1.4871179

Cited by 29 publications

(27 citation statements)

References 37 publications

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“…This mode is present in all samples (cf. figure 14 c)) shows a dot/ring segment at ~3.5Å, which corresponds to a graphitic microstructure [3]. This observation is in agreement with XPS data of the same thin film (cf.…”

Section: Dcms and Hipims At Substrate Temperatures Of 110 °C (Lt) As supporting

confidence: 80%

“…Similar observations were made by Tucker at al. [3]. However, only a weak correlation of the hardness of CNx films sputter in DCMS and HiPIMS modes to residual stress values is observed.…”

Section: Dcms and Hipims At Substrate Temperatures Of 110 °C (Lt) As mentioning

confidence: 94%

“…As the pulsed bias voltage in HiPIMS processes operates with a duty cycle of 6 %, less re-sputtered particles may be re-deposited, resulting in higher film densities and lowered growth rates. CNx thin films prepared in reactive Ar and Kr mixtures of / = 14% show higher and comparable densities of 2.30 and 2.17 g/cm 3 ± 0.15 g/cm 3 , respectively.…”

Section: Dcms and Hipims At Substrate Temperatures Of 110 °C (Lt) As mentioning

confidence: 99%

“…Using Ne gas mixtures, both sputter modes yield film densities that are comparatively low as a density of 1.67 g/cm 3 ± 0.15 g/cm 3 for the corresponding reactive HiPIMS process was extracted.…”

Section: Dcms and Hipims At Substrate Temperatures Of 110 °C (Lt) As mentioning

confidence: 99%

“…The interest in carbon-based thin films is flourishing [1][2][3][4]. According to literature, the mechanical properties of fullerene-like carbon nitride (FL-CNx) render interesting tribological and wear resistant coatings; it is attractive due to a high resiliency (elastic recovery of up to 98 %) as well as low wear and friction [5,6].…”

Section: Introductionmentioning

confidence: 99%

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A comparative study of direct current magnetron sputtering and high power impulse magnetron sputtering processes for CNx thin film growth with different inert gases

Schmidt

Czigány

Wissting

et al. 2016

Diamond and Related Materials

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A comparative study of direct current magnetron sputtering and high power impulse magnetron sputtering processes for CNX thin film growth with different inert gases, 2016, Diamond and related materials, (64), [13][14][15][16][17][18][19][20][21][22][23][24][25][26] ABSTRACTReactive direct current magnetron sputtering (DCMS) and high power impulse magnetron sputtering (HiPIMS) discharges of carbon in different inert gas mixtures (N2/Ne, N2/Ar, and N2/Kr)were investigated for the growth of carbon-nitride (CNx) thin films. Ion mass spectrometry showed that energies of abundant plasma cations are governed by the inert gas and the N2-to-inert gas flow ratios. The population of ion species depends on the sputter mode; HiPIMS yields approximately ten times higher flux ratios of ions originating from the target to process gas ions than DCMS.Exceptional are discharges in Ne with N2-to-Ne flow ratios < 20%. Here, cation energies and the amount of target ions are highest without influence on the sputter mode. CNx thin films were deposited in 14% N2/inert gas mixtures at substrate temperatures of 110 ºC and 430 ºC. The film properties show a correlation to the substrate temperature, the applied inert gas and sputter mode.The mechanical performance of the films is mainly governed by their morphology and composition, but not by their microstructure. Amorphous and fullerene-like CN0.14 films exhibiting a hardness of ~15 GPa and an elastic recovery of ~90 % were deposited at 110 ºC in reactive Kr atmosphere by DCMS and HiPIMS.

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Section: Dcms and Hipims At Substrate Temperatures Of 110 °C (Lt) As supporting

confidence: 80%

“…Similar observations were made by Tucker at al. [3]. However, only a weak correlation of the hardness of CNx films sputter in DCMS and HiPIMS modes to residual stress values is observed.…”

Section: Dcms and Hipims At Substrate Temperatures Of 110 °C (Lt) As mentioning

confidence: 94%

Section: Dcms and Hipims At Substrate Temperatures Of 110 °C (Lt) As mentioning

confidence: 99%

Section: Dcms and Hipims At Substrate Temperatures Of 110 °C (Lt) As mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A comparative study of direct current magnetron sputtering and high power impulse magnetron sputtering processes for CNx thin film growth with different inert gases

Schmidt

Czigány

Wissting

et al. 2016

Diamond and Related Materials

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Super‐Elasticity and Ultralow Friction of Hydrogenated Fullerene‐Like Carbon Films: Associated with the Size of Graphene Sheets

Cao

Zhao

Liu

et al. 2018

Adv Materials Inter

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such as high-hardness/strength, excellent elasticity, and high compressibility. [1][2][3][4] Carbon nitride films, [5] pure carbon films, [6] and hydrogenated carbon films [7] containing these fullerene-like structures have been proved to possess excellent elastic recovery rate (85%, 80%, and 85%, respectively) and high hardness values (60, 53, and 19 GPa, respectively). In particular, hydrogenated fullerene-like carbon (FLC:H) films can also exhibit ultralow friction behaviors, which are desirable to minimize mechanical dissipation. These properties are essential for the application of these materials as protective coatings to engineering components. But the exact relationship between these properties and the fullerene-like structures is still unclear. The nanostructure of graphene sheets and the number of cross-linking sites between them may be two main structural factors determining these properties. Exploring the structureproperties relationship is crucial to effectively tailor these properties for potentially more applications. Some relevant studies have demonstrated that fullerene-like spheroids (FLS) encased in disordered graphene layers [4] and aligned carbon nanotube films [8] can display a lot of mechanical characteristics similar to those of architectured materials. Controlling the size, concentration, and connectivity of FLS or manipulating buckled morphologies of nanotube can tailor their mechanical properties. Thus, it is expected that FLC films may yield exceptional and tunable mechanical properties by controlling the nanostructure of graphene sheets. However, there are very few experimental reports on these issues, because designing and controlling the nanostructure of graphene sheets in FLC films remains a technical challenge.Recently a number of methods, such as ion beam-assisted deposition, molecular beam epitaxy, and plasma enhanced chemical vapor deposition (PECVD) have been developed for manufacturing high quality graphene-like materials. [9][10][11] It has been demonstrated that low-energy argon ions bombardment in these deposition systems is beneficial for the formation of graphene network. [12][13][14] Molecular dynamics simulations experiments also showed that low-energy (10-25 eV) argon ions bombardment could result in an increase in the number of graphitic rings and further enhance the graphene network growth. [13,15] The formation of curved graphene sheets (CGS) in magnetron-sputtered CN x films was mainly attributed to Hydrogenated fullerene-like carbon (FLC:H) films would be a widely used material with a unique combination of properties including high-hardness/ strength, excellent elasticity, and ultralow friction. The nanostructure of graphene sheets and the number of cross-linking sites between them may be two main structural factors determining these properties. Exploring the structure-properties relationship is crucial to effectively tailor these properties for potentially more applications. In this study it is demonstrated that FLC:H films can yield exceptional and tunable mec...

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In‐situ stress suppression of hydrogenated a‐CN_x film prepared via Ar gas introduction

Wang

Zhang

2016

Surface & Interface Analysis

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Evolution of hydrogenated amorphous carbon nitride films was investigated with an introduction of Ar gas in the deposition. The results showed that compressive stress of the films decreased versus an increase of Ar flow rate. Especially, at an Ar flow rate of 5 sccm the film exhibited lower compressive stress, higher hardness and lower root‐mean‐square (rms) roughness than the films deposited without Ar gas introduction. Structural analysis showed that the films with higher hardness, low compressive stress and lower rms roughness had relatively high sp2 and nitrogen content. It was attributed to the assistance of Ar plasma, which can cause N atom to enter graphite ring easily and form curved graphite microstructure. Copyright © 2016 John Wiley & Sons, Ltd.

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Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films

Cited by 29 publications

References 37 publications

A comparative study of direct current magnetron sputtering and high power impulse magnetron sputtering processes for CNx thin film growth with different inert gases

A comparative study of direct current magnetron sputtering and high power impulse magnetron sputtering processes for CNx thin film growth with different inert gases

Super‐Elasticity and Ultralow Friction of Hydrogenated Fullerene‐Like Carbon Films: Associated with the Size of Graphene Sheets

In‐situ stress suppression of hydrogenated a‐CN_x film prepared via Ar gas introduction

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Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films

Cited by 29 publications

References 37 publications

A comparative study of direct current magnetron sputtering and high power impulse magnetron sputtering processes for CNx thin film growth with different inert gases

A comparative study of direct current magnetron sputtering and high power impulse magnetron sputtering processes for CNx thin film growth with different inert gases

Super‐Elasticity and Ultralow Friction of Hydrogenated Fullerene‐Like Carbon Films: Associated with the Size of Graphene Sheets

In‐situ stress suppression of hydrogenated a‐CNx film prepared via Ar gas introduction

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In‐situ stress suppression of hydrogenated a‐CN_x film prepared via Ar gas introduction