Final-state effects in the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>3</mml:mn><mml:mi>d</mml:mi></mml:math>photoelectron spectrum of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Fe</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi

Alvarado, S. F.; Erbudak, M.; Münz, Peter

doi:10.1103/physrevb.14.2740

Cited by 121 publications

(39 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The free energy/enthalpy argument can be somewhat flawed however, as evidenced by the oxidation of Fe at a SiO 2 interface [289], wherein the Si is thermodynamically favored. [168,169], but far from 100% spin-polarization by experiment near room temperature. The relevance here is not to argue for or against half-metallicity, but exploit the interfacial stoichiometry of Fe and Cr, when in an oxygen rich or depleted environment.…”

Section: Interfaces With Oxides: Oxidation/reduction Reactivitymentioning

confidence: 89%

See 1 more Smart Citation

Interface effects in spin-polarized metal/insulator layered structures

Velev

Dowben

Tsymbal

et al. 2008

Surface Science Reports

113

View full text Add to dashboard Cite

Recent advances in thin-film deposition techniques, such as molecular beam epitaxy and pulsed laser deposition, have allowed for the manufacture of heterostructures with nearly atomically abrupt interfaces. Although the bulk properties of the individual heterostructure components may be well-known, often the heterostructures exhibit novel and sometimes unexpected properties due to interface effects. At heterostructure interfaces, lattice structure, stoichiometry, interface electronic structure (bonding, interface states, etc.), and symmetry all conspire to produce behavior different from the bulk constituents. This review discusses why knowledge of the electronic structure and composition at the interfaces is pivotal to the understanding of the properties of heterostructures, particularly the (spin polarized) electronic transport in (magnetic) tunnel junctions.

show abstract

Section: Interfaces With Oxides: Oxidation/reduction Reactivitymentioning

confidence: 89%

“…Another well known material, Fe 3 O 4 , has been predicted to have close to 100% negative spin polarization [169,170] [224]. Disorder and other phases of FeO, depending on the barrier and the oxidation conditions, at the interface are responsible for this behavior.…”

Section: Half-metallic Interfacesmentioning

confidence: 99%

Interface effects in spin-polarized metal/insulator layered structures

Velev

Dowben

Tsymbal

et al. 2008

Surface Science Reports

113

View full text Add to dashboard Cite

show abstract

“…The experimental studies concerning the spin-resolved electronic structure of Fe 3 O 4 were performed mostly by means of photoelectron spectroscopy (PES) [23][24][25][26][27][28][29][30][31]. Due to a very low conduction of Fe 3 O 4 below T V = 120 K the spin-resolved electronic structure of Fe 3 O 4 cannot be studied by any superconductor spin-probing method, making spin-resolved PES [23][24][25][26][27][28][29][30][31] one of the most appropriate measurement techniques.…”

Section: Introductionmentioning

confidence: 99%

Magnetite: a search for the half-metallic state

Fonin¹,

Dedkov²,

Pentcheva³

et al. 2007

J. Phys.: Condens. Matter

103

View full text Add to dashboard Cite

We present a detailed study of the spin-dependent electronic structure of thin epitaxial magnetite films of different crystallographic orientations. Using spin-and angle-resolved photoelectron spectroscopy at room temperature, we determine for epitaxial Fe 3 O 4 (111) films a maximum spin polarization value of −(80 ± 5)% near E F . The spin-resolved photoelectron spectra for binding energies between 1.5 eV and E F show good agreement with the spin-split band structure from density functional theory (DFT) calculations which predict an overall energy gap in the spin-up electron bands in high symmetry directions, thus providing evidence for the half-metallic ferromagnetic state of Fe 3 O 4 in the [111] direction. In the case of the Fe 3 O 4 (100) surface, both the spin-resolved photoelectron spectroscopy experiments and the DFT density of states give evidence for a half-metal to metal transition: the measured spin polarization of about −(55 ± 10)% at E F and the theoretical value of −40% are significantly lower than the −100% predicted by local spin density approximation (LSDA) calculations for the bulk magnetite crystal as well as the −(80 ± 5)% obtained for the Fe 3 O 4 (111) films. The experimental findings were corroborated by DFT calculations as due to a surface reconstruction leading to the electronic states in the majority-spin band gap and thus to the reduced spin polarization.

show abstract

“…In addition, Fe 3 O 4 has been known as a kind of half metal with spin polarized conduction electrons in 3d minority spin bands. 17,18) In the recent years, the large negative MR effect in low field was expected for the Fe 3 O 4 thin films. [19][20][21][22][23][24][25][26] However, small negative MR ratio of about 1% have been observed for polycrystalline and single crystal thin films at room temperature (R.T.) under the magnetic field of 1 T. The large MR effect can be anticipated by the TMR through the thin insulating barriers between Fe 3 O 4 -grains, and has been expected to realize new magnetic storage devices of magnetic random access memory (MRAM), etc.…”

Section: )mentioning

confidence: 99%

Tunneling magnetoresistance in BaTiO3/Fe3O4 composites

Noshiro

Kamishima

Kakizaki

et al. 2012

Trans. Mat. Res. Soc. Japan

View full text Add to dashboard Cite

(1-x)BaTiO 3 -xFe 3 O 4 composites were successfully prepared by conventional solid-state sintering of raw materials (BaCO 3 , TiO 2 , and Fe 3 O 4 ) in the molar fraction x of Fe 3 O 4 to BaTiO 3 at 1323 K for 5 hours under Ar gas flow. X-ray diffraction (XRD) and electron probe micro analysis (EPMA) measurements were performed for these samples and it is confirmed that the composites consist of only two phases of

show abstract

Final-state effects in the3dphotoelectron spectrum ofFe3

Cited by 121 publications

References 10 publications

Interface effects in spin-polarized metal/insulator layered structures

Interface effects in spin-polarized metal/insulator layered structures

Magnetite: a search for the half-metallic state

Tunneling magnetoresistance in BaTiO<sub>3</sub>/Fe<sub>3</sub>O<sub>4</sub> composites

Contact Info

Product

Resources

About