Finding the cause of degradation of low-temperature oxide thin-film transistors

Jeong, Hyein; Nam, Seung‐Hee; Park, Kwon‐Shik; Choi, Hyun‐Chul; Jang, Jin

doi:10.1007/s40042-021-00069-3

Cited by 2 publications

(2 citation statements)

References 25 publications

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“…Figure 4 shows the measured (black solid line) and simulated (red solid line) XRR results for (a) N H3 /IGZO and (b) N H100 /IGZO. It can be seen that the simulation curve of the N H3 /IGZO sample is smoother than that of N H100 /IGZO, indicating that the interface of the former is smoother, and it produces less surface carrier scattering [25], which agrees sufficiently well with the AFM results. The IGZO densities of the N H3 /IGZO and N H100 /IGZO samples were 6.17 g/cm −3 and 6.15 g/cm −3 , respectively, and this extremely small error was caused by system measurement or calculation errors, so the change in hydrogen content in the buffer layer did not cause the density change of the IGZO layer.…”

Section: Si3n4supporting

confidence: 81%

Dependence of a Hydrogen Buffer Layer on the Properties of Top-Gate IGZO TFT

Huang,

Peng,

et al. 2024

Micromachines

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In this paper, the effect of a buffer layer created using different hydrogen-containing ratios of reactive gas on the electrical properties of a top-gate In-Ga-Zn-O thin-film transistor was thoroughly investigated. The interface roughness between the buffer layer and active layer was characterized using atomic force microscopy and X-ray reflection. The results obtained using Fourier transform infrared spectroscopy show that the hydrogen content of the buffer layer increases with the increase in the hydrogen content of the reaction gas. With the increase in the hydrogen-containing materials in the reactive gas, field effect mobility and negative bias illumination stress stability improve nearly twofold. The reasons for these results are explained using technical computer-aided design simulations.

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Section: Si3n4supporting

confidence: 81%

Dependence of a Hydrogen Buffer Layer on the Properties of Top-Gate IGZO TFT

Huang,

Peng,

et al. 2024

Micromachines

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“…In the future, flexible displays widely used in personal electronic products, especially wearable electronic devices, will have higher requirements for TFTs. Flexible transparent substrate materials, such as polyimide (PI) and poly(ether sulfone) (PES), are susceptible to thermal deformation at temperatures higher than 230 °C. − Therefore, low-temperature-processed TFTs becomes an essential technology for next-generation display technologies. By far, amorphous indium gallium oxide (α-IGZO) thin films have become a very competitive channel layer material for TFTs by virtue of their superior performance. − The prototype displays with an α-IGZO TFT as the driving circuit has shown satisfactory performance and has been applied in some commercial fields. − To realize flexible display applications, a lot of effort has been made to prepare high-performance α-IGZO TFTs at low temperature, and great progress has been made. ,− However, there exists still many problems in meeting flexible applications, including poor stability, threshold voltage shift, and degraded electrical performance. ,,,− …”

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confidence: 99%

Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits

Zhang

Wang

et al. 2022

ACS Nano

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Developing a low-temperature fabrication strategy of an amorphous InGaZnO (α-IGZO) channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) flexible device applications. Herein, an ultraviolet-assisted oxygen ambient rapid thermal annealing method (UV-ORTA), which combines ultraviolet irradiation with rapid annealing treatment in an oxygen atmosphere, was proposed to realize the achievement of high-performance α-IGZO TFTs at low temperature. Experimental results have confirmed that UV-ORTA treatment has the ability to suppress defects and obtain high-quality films similar to high-temperature-annealing-treated samples. α-IGZO/HfAlO TFTs with high-performance and low-voltage operating have been achieved at a low temperature of 180 °C for 200 s, including a high μsat of 23.12 cm2 V–1 S–1, large I on/off of 1.1 × 108, small subthreshold swing of 0.08 V/decade, and reliable stability under bias stress, respectively. As a demonstration of complex logic applications, a low-voltage resistor-loaded unipolar inverter based on an α-IGZO/HfAlO TFT has been built, demonstrating full swing characteristics and a high gain of 13.8. Low-frequency noise (LFN) characteristics of α-IGZO/HfAlO TFTs have been presented and concluded that the noise source tended to a carrier number fluctuation (ΔN) model from a carrier number and correlated mobility fluctuation (ΔN–Δμ) model. As a result, it can be inferred that the low-temperature UV-ORTA technique to improve α-IGZO thin film quality provides a facile and designable process for the integration of α-IGZO TFTs into a flexible electronic system.

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Finding the cause of degradation of low-temperature oxide thin-film transistors

Cited by 2 publications

References 25 publications

Dependence of a Hydrogen Buffer Layer on the Properties of Top-Gate IGZO TFT

Dependence of a Hydrogen Buffer Layer on the Properties of Top-Gate IGZO TFT

Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits

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