Finding the Initial Estimate for the Diode Bias Point in Multiport Receivers

Lima, J. A. P.; Rogers, J.; Amaya, Rony E.

doi:10.1109/tcsii.2015.2483098

Cited by 3 publications

(2 citation statements)

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“…Many interesting research topics regarding Multi-Port receivers remain uninvestigated. Some of these topics are listed below and described in more detail in the These topics I believe are currently the most important for Multi-Port receivers and to the best knowledge of the author they are still not published except in the author's publications: [95] and [96].…”

Section: Future Workmentioning

confidence: 99%

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Multi-Port Receivers System Analysis and Modeling

Lima¹

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Wireless communication has grown exponentially in the last few decades. Hence, the demand for more throughput and diverse communication standards (such as GSM, Bluetooth, WiFi, LTE), have increased over this time. Software-defined radio (SDR), which aims to be easily programmable, is a good candidate to meet current market demands. However, a number of technical challenges (e.g., dynamic range, wide band, sampling frequency, number of bits of the ADCs and power consumption, etc.) need to be addressed to make SDR a viable solution. This is in addition to the challenges presented by the architecture proposed by [1] - [8].The design simplicity together with wideband characteristics of Multi-Port receiver structures provides a RF architecture that can solve many of the current SDR challenges. Multi-Port receivers use diodes as power detectors and in this work, contrasted to other results published in the literature, we not only provide a controlled continuous bias to the diodes, we also propose a novel blind algorithm that reduces the Error Vector Magnitude (EVM) by adaptively controlling the diode bias point.Another key feature of optimum diode bias control is the Local Oscillator (LO) power requirements decrease. Results presented show that a LO power variation of more than 10dB produces no EVM degradation. We also developed a novel methodology for estimating the initial diode bias voltage for the optimizer. Although we simulated the methodology for four different Schottky diodes from different vendors (Win Corp, HP, Hitachi and Siemens), the process can be applied to other diodes. The initial value is located at the maximum of the second derivative of the I-V curve. We also investigated how memory effects affect the performance of the Multi-Port receivers. The results obtained in this investigation allow us to simplify the representation of the diode to a finite power series. We also introduced a technique to mitigate high-order nonlinearities in the Multi-Port receivers. To verify the results of this research we used a Simulink model that emulates the radio frequency (RF) and digital baseband sections of a Six-Port receiver.ii

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Section: Future Workmentioning

confidence: 99%

“…In Simulink, that means all signals at its input have the same sampling time. Blind Optimizer Chapter 5 and the work already published in [95] provides an initial estimate of the diode bias point. The purpose of the blind optimizer is to find the optimum V bias for the diode.…”

Section: E57 Optimizermentioning

confidence: 99%