Fine-Grain Reconfigurable Logic Cells Based on Double-Gate MOSFETs

Abstract

Abstract. This work presents a new style of gate-level reconfigurable cells based on the double-gate (DG) MOSFET device. The proposed dynamic-and static-logic cells demonstrate significant gate area reductions compared to conventional CMOS lookup table (LUT) techniques (between 80-95%) while configuration memory requirements are also reduced (up to 60%). Simulation results show that it can be used either in low power reconfigurable applications (up to 90% power reduction is possible) or for speeds comparable to those of CMOS-LUTs.