Abstract:In this paper, a strategy to finely modulate the energy band structure to control the carrier confinement capability of digital alloys (DA) is proposed. Strain analysis shows that As and Sb atoms are exchanged within the AlAsSb DA. The bottom of the corrected potential well is low on the left and high on the right in the growth direction, resulting in a higher band offset of the AlSb potential barrier layer on the left side of the potential well than on the right side. The modulation of the band leads to a hig… Show more
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