Fine pit pattern formation by EB-writing for a high density optical recording

Hosaka, Sumio; Koyanagi, Hajime; Katoh, Kohji; Isshiki, Fumio; Suzuki, Tomohisa; Miyamoto, M.; Arimoto, Akira; Maeda, Takeshi

doi:10.1016/s0167-9317(01)00480-4

Cited by 12 publications

(15 citation statements)

References 3 publications

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“…[4][5][6][7][8][9][10][11] However, application of this technology requires the fabrication technique of a nanometer-sized dot pattern used as a mold for nanoimprint. For the fabrication of a nanodot pattern mold, there are some candidate methods, such as electron beam (EB) lithography [12][13][14][15] and self-assembly using a block co-polymer (BCP). [16][17][18][19][20][21][22] EB lithography is thought to be more powerful than BCP selfassembly in that it allows us to precisely control the dot size and pitch.…”

Section: Introductionmentioning

confidence: 99%

Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Komori

Zhang

Akahane

et al. 2012

Jpn. J. Appl. Phys.

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We investigated the effects of developer and hydrogen silsesquioxane (HSQ) resist thickness in the formation of dot arrays with a pitch of <18×18 nm2 by using 30-keV electron beam (EB) lithography for bit patterned media (BPM). Optimum resist thickness and developer were investigated for the formation of fine dot arrays. We found that a 12-nm-thick HSQ resist was suitable to form fine dot patterns and the addition of NaCl into tetramethylammonium hydroxide (TMAH) could improve the development contrast (γ-value) of HSQ (the highest is 9.7). By using the 12-nm-thick HSQ resist film and 2.3 wt % TMAH/4 wt % NaCl developer, we successfully fabricated very fine resist dot arrays with a dot size of <10 nm and a pitch of 15×15 nm2, which corresponds to a storage density of about 3 Tbit/in.2 in BPM.

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Section: Introductionmentioning

confidence: 99%

Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Komori

Zhang

Akahane

et al. 2012

Jpn. J. Appl. Phys.

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“…Furthermore, we will require 2 Tbit/in. 2 in the future. To achieve this, we have to develop a patterned media 1) technology for highdensity recording.…”

Section: Introductionmentioning

confidence: 98%

“…The recording density of magnetic storage is increasing and is expected to exceed 1 Tbit/in. 2 in 2012. Furthermore, we will require 2 Tbit/in.…”

Section: Introductionmentioning

confidence: 99%

Possibility of Forming 18-nm-Pitch Ultrahigh Density Fine Dot Arrays for 2 Tbit/in.²Patterned Media Using 30-keV Electron Beam Lithography

Hosaka

Tanaka

Shirai

et al. 2010

Jpn. J. Appl. Phys.

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We studied the possibility of forming ultrahigh-density fine dot arrays using 30-keV electron beam (EB) drawing for 2 Tbit/in.2 patterned media. We investigated the effects of calixarene resist thickness and exposure dosage on the drawing of dot arrays with a minimum pitch. We found that the 13-nm-thick calixarene resist was very suitable for forming resist dot arrays with a pitch of 20 nm. Furthermore, the allowable region of proper exposure dosage became narrow as the pitch decreased. It is clarified that there exists a minimum pitch of 18 nm in drawing ultrahigh density fine dot arrays with a 13-nm-thick resist.

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“…To date, ultra-high density storage devices were fabricated on a disc substrate using electron beam (EB) lithography [1,2]. We try to form very fine dots directly on the substrate using EB irradiation.…”

Section: Introductionmentioning

confidence: 99%

Nano-dots formation on silver sulphide surface using electron beam irradiation

Sone

Tamura

Miyazaki

et al. 2006

Microelectronic Engineering

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Fine pit pattern formation by EB-writing for a high density optical recording

Cited by 12 publications

References 3 publications

Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Possibility of Forming 18-nm-Pitch Ultrahigh Density Fine Dot Arrays for 2 Tbit/in.²Patterned Media Using 30-keV Electron Beam Lithography

Nano-dots formation on silver sulphide surface using electron beam irradiation

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Fine pit pattern formation by EB-writing for a high density optical recording

Cited by 12 publications

References 3 publications

Electron Beam Lithography of 15×15 nm2 Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Electron Beam Lithography of 15×15 nm2 Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Possibility of Forming 18-nm-Pitch Ultrahigh Density Fine Dot Arrays for 2 Tbit/in.2Patterned Media Using 30-keV Electron Beam Lithography

Nano-dots formation on silver sulphide surface using electron beam irradiation

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Product

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Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Possibility of Forming 18-nm-Pitch Ultrahigh Density Fine Dot Arrays for 2 Tbit/in.²Patterned Media Using 30-keV Electron Beam Lithography