Fine structure of the asymmetric stretching vibration of dispersed oxygen in monoisotopic germanium

Mayur, A. J.; Sciacca, M. Dean; Udo, M. K.; Ramdas, A. K.; Itoh, Kohei M.; Wolk, J. A.; Häller, E. E.

doi:10.1103/physrevb.49.16293

Cited by 46 publications

(22 citation statements)

References 23 publications

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“…Under these conditions the 669.1 cm À1 band is resolved into a number of components corresponding to different n Ge-O-m Ge combinations, where n and m are the atomic numbers of the five stable Ge isotopes: 70 Ge, 72 Ge, 73 Ge, 74 Ge, and 76 Ge. A similar splitting was observed earlier for the asymmetric stretching LVM (n 3 ) due to interstitial oxygen atoms (O i ) in Ge [12][13][14]. The similarity in the splitting pattern of the 669.1 cm À1 line and the O i -related n 3 LVM line suggests the similarity in atomic structure of the defects giving rise to these lines.…”

Section: Methodssupporting

confidence: 64%

“…The similarity in the splitting pattern of the 669.1 cm À1 line and the O i -related n 3 LVM line suggests the similarity in atomic structure of the defects giving rise to these lines. The O i defect is known to consist of one oxygen atom, which is bound to two equivalent Ge neighbor atoms [12][13][14][15]. The 621.4 cm À1 line does not exhibit a similar fine structure at the resolution used.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Vacancy–oxygen complex in Ge crystals

Markevich¹,

Litvinov²,

Dobaczewski³

et al. 2003

Physica B: Condensed Matter

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Section: Methodssupporting

confidence: 64%

Section: Methodsmentioning

confidence: 99%

Vacancy–oxygen complex in Ge crystals

Markevich¹,

Litvinov²,

Dobaczewski³

et al. 2003

Physica B: Condensed Matter

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“…At low temperatures, those interstitial oxygen atoms are quantum-mechanically delocalized in the annulus around the original bond center of Ge-Ge. [11][12][13] The rotational degree of freedom of oxygen yields low-lying excitations in the far-infrared spectral region, which has been observed in phonon spectroscopy measurements. 11 The energy spectra deduced from these measurements can be accurately reproduced by a quantum rotor model.…”

Section: Introductionmentioning

confidence: 91%

Interacting quantum rotors in oxygen-doped germanium

Shima

Nakayama

2005

Phys. Rev. B

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We investigate the interaction effect between oxygen impurities in crystalline germanium on the basis of a quantum rotor model. The dipolar interaction of nearby oxygen impurities engenders nontrivial low-lying excitations, giving rise to anomalous behaviors for oxygen-doped germanium ͑Ge:O͒ below a few degrees Kelvin. In particular, it is theoretically predicted that Ge:O samples with oxygen-concentration of 10 17-18 cm −3show ͑i͒ power-law specific heats below 0.1 K, and ͑ii͒ a peculiar hump in dielectric susceptibilities around 1 K. We present an interpretation for the power-law specific heats, which is based on the picture of local double-well potentials randomly distributed in Ge:O samples.

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“…By incorporating 16 O in enriched single crystals of 70 Ge, 73 Ge, 74 Ge and 76 Ge the local vibrational mode spectra were selectively simplified. This led to the first determination of the energies of the 2 levels [53]. The dependences of the direct and indirect bandgaps on the germanium isotope mass were measured [54].…”

Section: Far-infrared Detectors and Bolometersmentioning

confidence: 99%

Germanium: From its discovery to SiGe devices

Häller

2006

Materials Science in Semiconductor Processing

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Germanium, element #32, was discovered in 1886 by Clemens Winkler. Its first broad application was in the form of point contact Schottky diodes for radar reception during WWII. The addition of a closely spaced second contact led to the first all-solid-state electronic amplifier device, the transistor. The relatively low bandgap, the lack of a stable oxide and large surface state densities relegated germanium to the number 2 position behind silicon. The discovery of the lithium drift process, which made possible the formation of p-i-n diodes with fully depletable i-regions several centimeters thick, led germanium to new prominence as the premier gamma-ray detector. The development of ultra-pure germanium yielded highly stable detectors which have remained unsurpassed in their performance. New acceptors and donors were discovered and the electrically active role of hydrogen was clearly established several years before similar findings in silicon. Lightly doped germanium has found applications as far infrared detectors and heavily Neutron Transmutation Doped (NTD) germanium is used in thermistor devices operating at a few milliKelvin. Recently germanium has been rediscovered by the silicon device community because of its superior electron and hole mobility and its ability to 2 induce strains when alloyed with silicon. Germanium is again a mainstream electronic material.

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Fine structure of the asymmetric stretching vibration of dispersed oxygen in monoisotopic germanium

Cited by 46 publications

References 23 publications

Vacancy–oxygen complex in Ge crystals

Vacancy–oxygen complex in Ge crystals

Interacting quantum rotors in oxygen-doped germanium

Germanium: From its discovery to SiGe devices

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