Fine structure of the melting process in pure CdTe and in CdTe with 2 mol% of Ge or Sn

Shcherbak, L.; Feychuk, P.; Kopach, O.; Panchuk, O.; Hayer, E.; Ipser, Herbert

doi:10.1016/s0925-8388(02)00878-2

Cited by 11 publications

(11 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is due to the fact that the fragments of the solid phase (clusters) contain a larger content of high-melting components and, possibly, have a different structure. Such transformations are also characteristic for pure and slightly doped CdTe [11]. The results mentioned above at the critical temperatures (1378 K and 1382 K) are also observed for pure CdTe [12].…”

Section: Dta Investigation Of the Cd1-x-ymnxznyte Melting-crystallizationsupporting

confidence: 71%

Thermodynamics and crystal growth of Cd1-x-yMnxZnyTe (x=0.10, 0.20, y=0.15)

Kopach

Shcherbak

et al. 2021

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII

View full text Add to dashboard Cite

In this work the structural, optical and electrical properties of Cd1-x-yMnxZnyTe single crystals (x=0.10, 0.20, y=0.15) grown by the vertical Bridgman method were investigated. Based on differential thermal analysis (DTA) results, it was found that the crystallization rate increases as the crystallization temperature (Ts) decreases. It is determined that the volume fraction of solid phase in Cd0.75Mn0.10Zn0.15Te and Cd0.65Mn0.20Zn0.15Te alloys decrease to a minimum in the temperature ranges 1366-1389 K and 1363-1388 K, respectively. The activation energies of melting and crystallization processes for these alloys under different conditions are established. The linear character of the dependence between the preexponential factor (lnϕsol.phase,0 and lnVmelt., sol. phase,0) and the activation energy of these processes is determined, which is evidence of a compensation effect. The band-gap value was estimated to be ~ 1.73 eV for Cd0.75Mn0.10Zn0.15Te and ~1.84 eV for Cd0.65Mn0.20Zn0.15Te at 300 K. Typical transmission images showed the presence of small Te inclusions (5-10 µm) in the crystals. The electrical resistivity, obtained from the I-V curves, was ~10 4 Ώ•cm for both crystals and decreased slightly toward the end of the ingots.

show abstract

Section: Dta Investigation Of the Cd1-x-ymnxznyte Melting-crystallizationsupporting

confidence: 71%

Thermodynamics and crystal growth of Cd1-x-yMnxZnyTe (x=0.10, 0.20, y=0.15)

Kopach

Shcherbak

et al. 2021

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII

View full text Add to dashboard Cite

show abstract

“…[9]. The samples were heated above their respective melting temperatures T m and annealed at various defined temperatures before cooling down with the aim of the melt homogenization.…”

Section: Cdte-based Melts Crystallization Rate As Function Of Temperamentioning

confidence: 99%

“…species with a shortrange order close to the initial crystalline substance) existing in equilibrium with an amorphous matrix. Besides, the crystallization rate (V s ) of the ''pure'' CdTe melts and the CdTe phase in the systems CdTe-Ge (In, Sn, Sb with contents up to 8 mol%) was evaluated by the DTA investigations [9]. It was obtained that the V s (1/T) relation can also be approximated by the Arrhenius equation for every investigated system.…”

Section: Cdte-based Melts Crystallization Rate As Function Of Temperamentioning

confidence: 99%

“…Various methods have been used today for investigation of the CdTe and CdZnTe melts transformation with increasing and decreasing temperature: electrical conductivity [1][2][3][4][5][6], thermo power [3,5], viscosity [7,8], differential thermal analysis [9][10][11][12] and others. It was shown that the crystals melting process occurs step-by-step with rapid transformation of creating structural units at certain temperatures [2,3,8].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Solid↔liquid Cd(Zn)Te phase transition correlative analysis

Shcherbak¹,

Kopach²,

Fochuk³

2011

Journal of Crystal Growth

View full text Add to dashboard Cite

“…1a-d show typical thermograms of the phase-melting process of pure CdTe and CdTe-Al in a dynamic heating regime. The sharp breaks in the thermograms of the CdTe samples after heating at 1366 and 1379 K demonstrated the sensitivity of the DTA apparatus to both the large endothermic effect of melting and the small additional endothermic effect that is peculiar to the melting process [10][11][12][13][14] . Increasing the aluminum content in the system proportionately diminishes the endothermic effect at the start of the melting process and increases the baseline curvature.…”

Section: Resultsmentioning

confidence: 99%

Regularities in the melting and crystallization of CdTe-Al alloys

et al. 2015

View full text Add to dashboard Cite

Using differential thermal analysis, we investigated the parameters of the processes of melting and crystallization of the CdTe-Al system near the CdTe side (CdTe + 2 mol. % Al, CdTe + 4 mol. % Al, and CdTe + 6 mol. % Al). By varying the melts' intermediate isothermal holding temperature for 10, 30, and 60 minutes whilst heating them up to 1423 K, we determined the conditions needed for the melts' full homogenization. We demonstrated that increasing the Al content changes the mechanism of the melting of the CdTe phase.

show abstract

Fine structure of the melting process in pure CdTe and in CdTe with 2 mol% of Ge or Sn

Cited by 11 publications

References 7 publications

Thermodynamics and crystal growth of Cd1-x-yMnxZnyTe (x=0.10, 0.20, y=0.15)

Thermodynamics and crystal growth of Cd1-x-yMnxZnyTe (x=0.10, 0.20, y=0.15)

Solid↔liquid Cd(Zn)Te phase transition correlative analysis

Regularities in the melting and crystallization of CdTe-Al alloys

Contact Info

Product

Resources

About