and military devices. Among these applications, medical diagnostics is particularly significant, but it presently requires direct exposure to high doses of radiation, which is harmful to human health, increasing cancer risk, especially in children. [1,2] Hence, X-ray detectors possessing both high sensitivity and high resolution with a low light interface noise [3,4] are required to minimize the radiation exposure during routine medical diagnostics. In the pertinent literature, use of conventional semiconductors for direct X-ray detection has been reported by several groups, including amorphous Se, [5] crystalline Si, [6] Ge, [7] HgI 2 , [8] CdTe, [9,10] and CdZnTe, [9,10] indicating that the most effective materials are indirect bandgap semiconductors [5-10] that exhibit low light interference noise. However, as such devices possess low sensitivity due to the low atomic number values of their materials, [7] as well as they still require expensive fabrication and complex processing methods, there is a high industrial demand for cost-effective highly sensitive X-ray detectors that are more suited for mass production. Ionic perovskite crystals can be processed from solution at low temperatures, in contrast to covalent bond semiconductors, which require a high-temperature crystallization process. Consequently, lead halogen perovskite has emerged as a promising candidate due to its cost-effectiveness, high crystal quality, high absorption cross-section, high illumination, and ability to form High-energy radiation detectors such as X-ray detectors with low light photoresponse characteristics are used for several applications including, space, medical, and military devices. Here, an indirect bandgap inorganic perovskite-based X-ray detector is reported. The indirect bandgap nature of perovskite materials is revealed through optical characterizations, time-resolved photoluminescence (TRPL), and theoretical simulations, demonstrating that the differences in temperature-dependent carrier lifetime related to CsPbX 3 (X = Br, I) perovskite composition are due to the changes in the bandgap structure. TRPL, theoretical analyses, and X-ray radiation measurements reveal that the high response of the UV/visible-blind yellow-phase CsPbI 3 under high-energy X-ray exposure is attributed to the nature of the indirect bandgap structure of CsPbX 3. The yellowphase CsPbI 3-based X-ray detector achieves a relatively high sensitivity of 83.6 μCGy air −1 cm −2 (under 1.7 mGy air s −1 at an electron field of 0.17 V μm −1 used for medical diagnostics) although the active layer is based solely on an ultrathin (≈6.6 μm) CsPbI 3 nanocrystal film, exceeding the values obtained for commercial X-ray detectors, and further confirming good material quality. This CsPbX 3 X-ray detector is sufficient for cost-effective device miniaturization based on a simple design.