Finely Interpenetrating Bulk Heterojunction Structure for Lead Sulfide Colloidal Quantum Dot Solar Cells by Convective Assembly

Shi, Guozheng; Kaewprajak, Anusit; Ling, Xufeng; Hayakawa, Akinobu; Zhou, Shaoxia; Song, Bin; Kang, YangWon; Hayashi, Takahiro; Altun, Mutlu Ege; Nakaya, Masahiro; Liu, Zeke; Wang, Haibin; Sagawa, Takashi; Ma, Wanli

doi:10.1021/acsenergylett.9b00053

Cited by 34 publications

(41 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nevertheless, the preparation of ordered nanopillar involves high-cost optical lithography and plasma etching. Additionally, Shi et al [175] simultaneously controlled the growth orientation of ZnO NWs and introduced CQD deposition via convective assembly, thereby preparing the dense packing and efficient CQD infiltration (Figure 14e). The V oc with the growth strategy is also improved slightly, compared to that with spin-NWs (Figure 14f).…”

Section: Etl In Dbh Structurementioning

confidence: 99%

“…Shi et al. [ 175 ] used the molecule with negative dipole moment to modify the interface between ZnO and CQD films, significantly reducing interface recombination. The CQDSC with the 4‐aminobenzoic acid (ABA) treatment can achieve a V oc of 0.54 V, which is 50 mV higher than that without treatment (improved by 10.2%), and the V oc loss reaches ≈0.59 V. Moreover, hydrogen plasma treatment can also passivate ZnO NWs, significantly reducing interface defect density.…”

Section: Charge Transport Layermentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Open‐Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells

Liu

Xian

et al. 2021

Advanced Materials

View full text Add to dashboard Cite

absorption coefficients, which can be used to capture the far-infrared of solar radiation. [13,14] This outperforms silicon-based and other solution-based semiconductor materials. Additionally, lead chalcogenide CQDSCs have the potential to break through the Shockley-Quesser limit, via multiple exciton generation. [15][16][17][18] In the past decade, lead chalcogenide CQDSCs have attracted abundant attention and their power conversion efficiencies (PCEs) have increased from ≈3% to ≈14%. [19][20][21] Moreover, the facile solution-processability (synthesis and ligand exchange) allows the production of solar cells by spraying, scraping, and roll-to-roll process, enabling great commercial potential. [22][23][24][25] Recently, some reports discussed the commercial viability of lead chalcogenide CQDSCs. [26,27] The results demonstrated that the cost of flexible lead chalcogenide CQDSCs can be as low as ≈0.94 $ per W, indicating the strong competitiveness of these solution-processability solar cells. To reach this low production cost, the PCEs of the CQDSCs are assumed to be 19% and the devices are assumed to be manufactured via a roll-toroll process. [27] Thus, it is still a great challenge for the commercialization of lead chalcogenide CQDSCs, and the low PCE is still the main obstacle for its market competitiveness.We summarize the main developments of lead chalcogenide CQDSCs (see Figure 1). In the early stage, the Schottky structure was used and it achieved the highest PCE of ≈5.2% in 2013. [28] But after 2014, there exist few reports of lead chalcogenide CQDSCs with the Schottky structure, due to the mismatch between optical absorption and charge extraction. [29] Subsequently, the n-p structure and depleted bulk heterojunction (DBH) structure have greatly improved the PCEs of lead chalcogenide CQDSCs. [30,31] N-p structure uses p-n junction to improve carrier extraction efficiency and reduce recombination, thus increasing the PCE of lead chalcogenide CQDSCs from ≈3% to above 9% in 2015. [19,32] Additionally, the absorption coefficient of lead chalcogenide CQDSCs reaches ≈10 6 cm −3 , which means that it is essential to use ≈1 μm solar absorber to fully absorb solar radiation. The DBH structure uses a bulk electron transport layer (ETL) to address the challenge of insufficient carrier diffusion length for the n-p structure, thus increasing the absorber thickness and greatly improving the short-circuit current (J sc ). [33][34][35] Through continued efforts, the PCE of the DBH structure has reached ≈10.8%. [36] To date, more research Lead chalcogenide colloidal quantum dot solar cells (CQDSCs) have received considerable attention due to their broad and tunable absorption and high stability. Presently, lead chalcogenide CQDSC has achieved a power conversion efficiency of ≈14%. However, the state-of-the-art lead chalcogenide CQDSC still has an open-circuit voltage (V oc ) loss of ≈0.45 V, which is significantly higher than those of c-Si and perovskite solar cells. Such high V oc loss severely limits the performance im...

show abstract

Section: Etl In Dbh Structurementioning

confidence: 99%

Section: Charge Transport Layermentioning

confidence: 99%

See 1 more Smart Citation

Open‐Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells

Liu

Xian

et al. 2021

Advanced Materials

View full text Add to dashboard Cite

show abstract

“…Semiconductor colloidal quantum dots (CQDs) are attracting enormous attention in the next-generation photovoltaic applications due to their size-dependent bandgap tunability, facile solution-processed manufacturability and especially multiple exciton generation (MEG) effect [1,2]. The photovoltaic performance of colloidal quantum dot solar cells (CQDSCs) has been significantly improved in the past few years by CQDs surface ligand modification [3][4][5][6][7][8][9], device architecture optimization [10][11][12][13][14][15], active layer deposition engineering [16][17][18], etc. Nevertheless, the performance of CQDSCs is still much lower than its theoretical efficiency (44.4%) [19,20].…”

Section: Introductionmentioning

confidence: 99%

“…The PCE of CQDSCs is also limited by the common trade-off between light absorption and charge carrier extraction in CQDs layer. To further balance the charge extraction efficiencies and light absorption, n-type semiconductor (i.e., ZnO) nanowire electrode with large electron diffusion coefficient has been introduced into CQDSCs to build a bulk heterojunction architecture in favor of improving the charge separation at the electrode/CQDs interface and electron diffusion length, which results in possible increase of the thickness of CQDs active layer [18,[22][23][24][25]. Although the use of nanowire electrode can improve the J SC of the device to a certain extent due to the increased thickness of CQDs active layer, the V OC and fill factor (FF) of these devices are usually deteriorated compared to the planar heterojunction CQDSCs.…”

Section: Introductionmentioning

confidence: 99%

Surface-Modified Graphene Oxide/Lead Sulfide Hybrid Film-Forming Ink for High-Efficiency Bulk Nano-Heterojunction Colloidal Quantum Dot Solar Cells

Zhang

Ding

et al. 2020

Nano-Micro Lett.

View full text Add to dashboard Cite

Solution-processed colloidal quantum dot solar cells (CQDSCs) is a promising candidate for new generation solar cells. To obtain stable and high performance lead sulfide (PbS)-based CQDSCs, high carrier mobility and low non-radiative recombination center density in the PbS CQDs active layer are required. In order to effectively improve the carrier mobility in PbS CQDs layer of CQDSCs, butylamine (BTA)-modified graphene oxide (BTA@GO) is first utilized in PbS-PbX2 (X = I−, Br−) CQDs ink to deposit the active layer of CQDSCs through one-step spin-coating method. Such surface treatment of GO dramatically upholds the intrinsic superior hole transfer peculiarity of GO and attenuates the hydrophilicity of GO in order to allow for its good dispersibility in ink solvent. The introduction of BTA@GO in CQDs layer can build up a bulk nano-heterojunction architecture, which provides a smooth charge carrier transport channel in turn improves the carrier mobility and conductivity, extends the carriers lifetime and reduces the trap density of PbS-PbX2 CQDs film. Finally, the BTA@GO/PbS-PbX2 hybrid CQDs film-based relatively large-area (0.35 cm2) CQDSCs shows a champion power conversion efficiency of 11.7% which is increased by 23.1% compared with the control device.

show abstract

Matrix Manipulation of Directly‐Synthesized PbS Quantum Dot Inks Enabled by Coordination Engineering

Liu

Shi

et al. 2021

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

The direct-synthesis of conductive PbS quantum dot (QD) ink is facile, scalable, and low-cost, boosting the future commercialization of optoelectronics based on colloidal QDs. However, manipulating the QD matrix structures still is a challenge, which limits the corresponding QD solar cell performance. Here, for the first time a coordination-engineering strategy to finely adjust the matrix thickness around the QDs is presented, in which halogen salts are introduced into the reaction to convert the excessive insulating lead iodide into soluble iodoplumbate species. As a result, the obtained QD film exhibits shrunk insulating shells, leading to higher charge carrier transport and superior surface passivation compared to the control devices. A significantly improved power-conversion efficiency from 10.52% to 12.12% can be achieved after the matrix engineering. Therefore, the work shows high significance in promoting the practical application of directly synthesized PbS QD inks in large-area low-cost optoelectronic devices.

show abstract

Finely Interpenetrating Bulk Heterojunction Structure for Lead Sulfide Colloidal Quantum Dot Solar Cells by Convective Assembly

Cited by 34 publications

References 45 publications

Open‐Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells

Open‐Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells

Surface-Modified Graphene Oxide/Lead Sulfide Hybrid Film-Forming Ink for High-Efficiency Bulk Nano-Heterojunction Colloidal Quantum Dot Solar Cells

Matrix Manipulation of Directly‐Synthesized PbS Quantum Dot Inks Enabled by Coordination Engineering

Contact Info

Product

Resources

About