FinFET IO Device Performance Gain with Heated Implantation

Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework

“…Extended defects can be related to the implantation and annealing process. Thus, innovative process conditions to reduce the defects concentration, such as heated implantation, are being explored [2]. To assist in the optimization of the heated implantation process, kinetic Monte Carlo (KMC) is an efficient methodology as it takes temperature into account [3] and is integrated in the state-of-the-art technology computeraided design (TCAD) software Sentaurus Process [4].…”