2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) 2017
DOI: 10.23919/eosesd.2017.8073437
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FinFET SCR: Design challenges and novel fin SCR approaches for on-chip ESD protection

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Cited by 11 publications
(4 citation statements)
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“…In as much as these findings verify the sluggish diffusion hypotheses, Paul [64] raised several concerns-hinting at possible errors in diffusion calculations presented by Tsai et al [57] They had estimated diffusion coefficients using conventional means based on a quasibinary approach. [57] In their response, Tsai et al [65] pointed out that Paul's idea [64] behind a similar diffusion behavior in quasibinary and binary couples being identical was flawed. They argued that minor nontarget element diffusion exists in many alloy systems and thus, it is almost impossible to have a single interdiffusion coefficient.…”
Section: Sluggish Diffusion Effectmentioning
confidence: 70%
“…In as much as these findings verify the sluggish diffusion hypotheses, Paul [64] raised several concerns-hinting at possible errors in diffusion calculations presented by Tsai et al [57] They had estimated diffusion coefficients using conventional means based on a quasibinary approach. [57] In their response, Tsai et al [65] pointed out that Paul's idea [64] behind a similar diffusion behavior in quasibinary and binary couples being identical was flawed. They argued that minor nontarget element diffusion exists in many alloy systems and thus, it is almost impossible to have a single interdiffusion coefficient.…”
Section: Sluggish Diffusion Effectmentioning
confidence: 70%
“…[5][6][7] Both the existence and the underlying principles of this core effect are still under hot debate. [2][3][4][5][6][7][8][9][10] Our results of vacancies diffuse with a strong memory effect, spending unequal time in different sites, and hopping back and forth frequently between pairs of sites should provide an excellent picture to understand the sluggish diffusion. Our finding that vacancies actively hop between different lattice sites, but get trapped in small local regions, making some particles only move in small local regions, should be a new way to understand the sluggish diffusion and a new phenomenon worth researchers in HEAs looking for.…”
Section: High-entropy Alloymentioning
confidence: 99%
“…[ 1 ] Theorists are also aware that understanding the vacancy dynamics of HEAs can help us to understand its most controversial core effect, [ 2 , 3 , 4 ] the sluggish diffusion effect. [ 5 , 6 , 7 , 8 , 9 , 10 ] As vacancy‐like defects have recently been shown to be important in glassy systems, [ 11 , 12 , 13 , 14 , 15 ] the study of vacancy dynamics sounds useful in both crystalline and amorphous materials.…”
Section: Introductionmentioning
confidence: 99%
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