Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

Wisniewski, David; Byrne, Kristopher; Fernandes, Carlos; Stewart, Corey; Souza, C. F. de; Ruda, Harry E.

doi:10.1021/acs.nanolett.8b04646

Cited by 11 publications

(6 citation statements)

References 79 publications

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“…[ 34,35 ] For our ZnSe NW FETs, the values n 0 = 0.02 N c and ζ 0 = −100 meV also agree with values in literature and are consistent with the observed heavy compensation from large amounts of donor and acceptor states in ZnSe NWs. [ 36,37 ] The agreement with literature demonstrates the validity of our model and also its ability to determine Fermi level position from standard conductance based measurements on nanoscale FETs, which usually requires sophisticated technology to measure. [ 38,39 ]…”

Section: Resultssupporting

confidence: 72%

Rethinking the Characterization of Nanoscale Field‐Effect Transistors: A Universal Approach

Byrne

Shik

Wisniewski

et al. 2020

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Standard methods for calculating transport parameters in nanoscale field‐effect transistors (FETs), namely carrier concentration and mobility, require a linear connection between the gate voltage and channel conductance; however, this is often not the case. One reason often overlooked is that shifts in chemical and electric potential can partially compensate each other, commonly referred to as quantum capacitance. In nanoscale FETs, capacitance is often unmeasurable and an analytical formula is required, which assumes the conducting channel as metallic and common methods of determining threshold voltage no longer couple properly into transport equations. As present and future FET structures become smaller and have increased channel‐gate coupling, this issue will render standard methods impossible to use. This work discusses the validity of common methods of characterization for nanoscale FETs, develops a universal model to determine transport properties by only measuring the threshold voltage of an FET and presents a new parameter to easily classify FETs as either quantum capacitance‐limited or metallic approximated charge transport. Also considered in this work is electrical hysteresis from trap states and, in combination with the proposed universal model, novel techniques are introduced to measure and remove the errors associated with these effects often ignored in literature.

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Section: Resultssupporting

confidence: 72%

Rethinking the Characterization of Nanoscale Field‐Effect Transistors: A Universal Approach

Byrne

Shik

Wisniewski

et al. 2020

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“…In recent years, ZnSe has not only been used for visible light emission and detection, it has also attracted the attention of SERS researchers because of its chemical enhancement. In addition, ZnSe exhibits low toxicity, low prices, and good stability, so we chose Ag and ZnSe to construct the SERS structure. − Most importantly, the introduction of ZnSe improved the CT effect. In addition, ZnSe protects the Ag to prevent oxidation and realize long-term storage of the substrate.…”

Section: Introductionmentioning

confidence: 99%

Interface Design of 3D Flower-like Ag@ZnSe Composites: SERS and Photocatalytic Performance

Chu

Wang

Guo

et al. 2023

ACS Appl. Mater. Interfaces

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In this work, we cosputtered Ag and ZnSe on a polystyrene template to form a three-dimensional (3D) Ag@ZnSe (x) structure. The 3D surface morphology and material composition that provided abundant "hot spots" were controlled by adjusting the sputtering power of the ZnSe, which was confirmed by finite-difference time-domain (FDTD) simulation. The introduction of ZnSe into the noble metal Ag also introduced a charge-transfer (CT) effect into the system, and the CT path was proven with the two-dimensional correlation spectroscopy (2D-COS)-surface-enhanced Raman scattering (SERS) technique. In addition, the substrate exhibited excellent catalytic activity due to the CT effect. The catalyzed degradation of malachite green (MG) was due to the CT effect in the system, and the catalytic process was successfully monitored by in situ SERS. Most importantly, the catalytic degradation by Ag@ZnSe (x) with different parameters was proportional to the degree of CT (ρ CT ). The SERS and catalytic mechanisms were analyzed in depth with the 2D-COS-SERS technique, which was also useful in verifying the CT process. The catalytic sites for MG were successfully monitored with the 2D-COS-SERS technique. This study provides a reference for studies of the synergistic effects of the electromagnetic mechanism and CT, as well as a new perspective on photocatalysis with dye molecules and monitoring of the catalytic processes.

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“…Among them, zinc selenide (ZnSe), a typical photoelectronic semiconductor material with a wide direct band gap of ∼2.70 eV (∼460 nm), has attracted great attention. Different nanostructures of ZnSe have been synthesized so far, such as nanoparticles, nanowires, nanorods, nanobelts, nanosheets and nanotubes [1][2][3][4][5][6][7]. However, owing to the intrinsic band gap structure of ZnSe, its photoelectronic activity only falls in the narrow visible region.…”

Section: Introductionmentioning

confidence: 99%

Cation-exchange synthesis of PbSe/ZnSe hetero-nanobelts with enhanced near-infrared photoelectronic performance

et al. 2021

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To develop excellent photoelectronic and photovoltaic devices, a semiconductor with high photoelectron production efficiency and broad band absorption is urgently required. In this article, novel II-type PbSe/ZnSe hetero-nanobelts with enhanced near-infrared absorption have been synthesized via a facile strategy of a partial cation-exchange reaction and thermal treatment. Derived from ZnSe·0.5N2H4 nanobelts as templates, the belt-like morphology was preserved. Due to the mismatch of the crystal type and parameters between PbSe and ZnSe, the formed PbSe in the form of nanoparticles were separated out and decorated on the nanobelts. Furthermore, the composition ratio of Pb/Zn can be tuned through manipulating the adding amount of Pb2+ cations, the reaction temperature and time. The ultraviolet−visible−infrared diffuse spectra measurements suggest that the as-prepared PbSe/ZnSe hetero-nanobelts exhibited a broad band absorption from 300 to 1000 nm. In addition, they demonstrated excellent photoresponsivity in the same wavelength region and displayed a peak at approximately 840 nm. Finally, the enhanced photoelectronic sensing mechanism was discussed.

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Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

Cited by 11 publications

References 79 publications

Rethinking the Characterization of Nanoscale Field‐Effect Transistors: A Universal Approach

Rethinking the Characterization of Nanoscale Field‐Effect Transistors: A Universal Approach

Interface Design of 3D Flower-like Ag@ZnSe Composites: SERS and Photocatalytic Performance

Cation-exchange synthesis of PbSe/ZnSe hetero-nanobelts with enhanced near-infrared photoelectronic performance

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