Finite-difference time-domain modeling of nonperfectly conducting metallic thin-film gratings

Judkins, Justin B.; Ziolkowski, Richard W.

doi:10.1364/josaa.12.001974

Cited by 122 publications

(69 citation statements)

References 14 publications

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“…In order to accurately model metals at optical frequencies, it is necessary to make some changes [13], [14] to the standard Yee's FDTD scheme [15]. Electromagnetic fields in metals are described by adding a current term to Maxwell's curl equations (Drude model)…”

Section: A Fdtd Analysis Of Metallic Structures At Optical Frequenciesmentioning

confidence: 99%

“…On the other hand, we define the decay rate enhancement as a ratio of the total decay rate in a microcavity and the spontaneous emission rate in a bulk semiconductor (14) The modulation speed of an LED is proportional to . When analyzing a light-emitting device, we care about the overall efficiency, defined as a product of and the external efficiency…”

Section: E Purcell Factor and Decay Rate Enhancementmentioning

confidence: 99%

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Surface plasmon enhanced light-emitting diode

Vučković

Lončar²,

Scherer³

2000

IEEE J. Quantum Electron.

259

185

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Abstract-A method for enhancing the emission properties of light-emitting diodes, by coupling to surface plasmons, is analyzed both theoretically and experimentally. The analyzed structure consists of a semiconductor emitter layer thinner than 2 sandwiched between two metal films. If a periodic pattern is defined in the top semitransparent metal layer by lithography, it is possible to efficiently couple out the light emitted from the semiconductor and to simultaneously enhance the spontaneous emission rate. For the analyzed designs, we theoretically estimate extraction efficiencies as high as 37% and Purcell factors of up to 4.5. We have experimentally measured photoluminescence intensities of up to 46 times higher in fabricated structures compared to unprocessed wafers. The increased light emission is due to an increase in the efficiency and an increase in the pumping intensity resulting from trapping of pump photons within the microcavity.

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Section: A Fdtd Analysis Of Metallic Structures At Optical Frequenciesmentioning

confidence: 99%

Section: E Purcell Factor and Decay Rate Enhancementmentioning

confidence: 99%

Surface plasmon enhanced light-emitting diode

Vučković

Lončar²,

Scherer³

2000

IEEE J. Quantum Electron.

259

185

View full text Add to dashboard Cite

show abstract

“…The outer boundary of the computation lattice is terminated to the convolutional perfectly matched layer (CPML) to dissipate outgoing waves [47]. The second-order Lorentz dispersion model is employed to characterize the frequency-dependent relative permittivity of silver, when time dependency is taken exp ( jωt) [48]:…”

Section: Device Structure and Analysis Methodsmentioning

confidence: 99%

Active Focusing of Light in Plasmonic Lens via Kerr Effect

Nasari

Abrishamian

2012

Journal of the Optical Society of Korea

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We numerically demonstrate the performance of a plasmonic lens composed of an array of nanoslits perforated on thin metallic film with slanted cuts on the output surface. Embedding Kerr nonlinear material in nanoslits is employed to modulate the output beam. A two dimensional nonlinear-dispersive finitedifference time-domain (2D N-D-FDTD) method is utilized. The performance parameters of the proposed lens such as focal length, full-width half-maximum, depth of focus and the efficiency of focusing are investigated. The structure is illuminated by a TM-polarized plane wave and a Gaussian beam. The effect of the beam waist of the Gaussian beam and the incident light intensity on the focusing effect is explored. An exact formula is proposed to derive electric field E from electric flux density D in a Kerr-Dispersive medium. Surface plasmon (SPs) modes and Fabry-Perot (F-P) resonances are used to explain the physical origin of the light focusing phenomenon. Focused ion beam milling can be implemented to fabricate the proposed lens. It can find valuable potential applications in integrated optics and for tuning purposes.

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“…The source plane is placed in the free space above the DBR 1 . Frequency-domain Lorentz dispersion model [26] is adapted for metals with negative dielectric constant such as W or Pt. near field enhancement resulting from the thin normal metal electrodes.…”

mentioning

confidence: 99%

Enhancing the photomixing efficiency of optoelectronic devices in the terahertz regime

Pilla

2007

Applied Physics Letters

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A method to reduce the transit time of majority of carriers in photomixers and photo detectors to < 1 ps is proposed. Enhanced optical fields associated with surface plasmon polaritons, coupled with velocity overshoot phenomenon results in net decrease of transit time of carriers. As an example, model calculations demonstrating > 280× (or ∼2800 and 31.8 µW at 1 and 5 THz respectively) improvement in THz power generation efficiency of a photomixer based on Low Temperature grown GaAs are presented. Due to minimal dependence on the carrier recombination time, it is anticipated that the proposed method paves the way for enhancing the speed and efficiency of photomixers and detectors covering UV to far infrared communications wavelengths (300 to 1600 nm).Recent experimental observation of extraordinary optical transmission through a normal metal film having subwavelength holes[1] has generated intense interest in harnessing the underlying physics for photonic applications. It is widely believed that quasi two-dimensional electromagnetic excitations tightly bound to the metal surface known as Surface Plasmon Polaritons (SPPs) are responsible for the observed near field enhancement of the optical radiation. Exponential decay of field components arising from SPPs (penetrating ∼100, ∼10 nm in dielectric and metal respectively), make them highly attractive for miniature photonic circuits and devices [2]. Currently, several potential applications of SPPs are being explored including wave guiding [3] and near-field microscopy [4]. However, application of SPPs to enhance the speed and efficiency of photo detectors or photomixers has not been attempted due to the complexity of underlying physics and optimal device designs involving complicated dielectric-metal structures.In this letter we propose a simple interdigitated metal structure embedded in a suitable semiconductor material to harness SPPs for improving the speed and efficiency of photomixers and detectors. Such a device can be realized with the existing material growth techniques [5]. As an example, we demonstrate via model calculations, significant (> 280×) improvement in the efficiency of a THz photomixer based on Low Temperature grown GaAs (LT-GaAs). Microwave to THz radiation sources in the 0.1 to 10 THz are being extensively studied for their application in communications, medical imaging, and spectroscopy [6,7,8,9,10]. For many applications-compact, narrow-linewidth, widely tunable continuous wave sources are necessary. In particular, to be used as a local oscillator in communications systems the THz source should produce stable output power > 10 µW [8,11]. Among the various techniques being pursued [6,8,11,12,13] electrical down conversion of optical microwave sources in a suitable photomixer [6,11,12] are appealing due to the easy availability of tunable, narrow-linewidth, and stable solid state lasers. However, until now the output power from these photomixers is limited to < 10 µW in the cru- . When the top and bottom interdigitated structures in (b) are con...

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Finite-difference time-domain modeling of nonperfectly conducting metallic thin-film gratings

Cited by 122 publications

References 14 publications

Surface plasmon enhanced light-emitting diode

Surface plasmon enhanced light-emitting diode

Active Focusing of Light in Plasmonic Lens via Kerr Effect

Enhancing the photomixing efficiency of optoelectronic devices in the terahertz regime

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