In this paper, a physics-based high-frequency (HF) model of switching power converters including the insulated gate bipolar transistor (IGBT) unit cells, heat sink, and connective printed circuit board (PCB) traces combined in a single electrical circuit is presented. The IGBT model includes the HF stray components superimposed on the well-known Hefner IGBT model. The HF components were calculated using a 3-D quasi-static finite element (3-D FE) analysis. The proposed complex model of the IGBT was verified both numerically and experimentally at different switching frequencies. The computed IGBT model was used in a low-high frequency model of a motor-drive system, and the common mode ground current was experimentally verified showing excellent results.Index Terms-Electromagnetic interference (EMI), electromagnetic compatibility (EMC), finite elements, high-frequency (HF) modeling, power semiconductor switches.