Finite element analysis of moisture induced thermo-mechanical delamination of semiconductor packages considering in-situ moisture desorption during reflow process

Hwang, Yeon Taek; Um, Hui Jin; Yu, Myeong Hyeon; Lee, Dae‐Woong; Lee, Mi Jung; Kim, Kwang Ho

doi:10.1016/j.microrel.2021.114146

Cited by 7 publications

(5 citation statements)

References 19 publications

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“…Interfacial Delamination Criteria. A simple way of predicting the delamination in the package interface is presented by Hwang et al [11] using a cohesive model to determine the damage initiation at the interface. The model is a stress analysis on each interface of the package as represented by Eq.…”

Section: Methodsmentioning

confidence: 99%

“…The maximum shear stress was 88.3 MPa while the maximum principal stress (or normal stress) was 46 MPa. From Hwang et al [11], the adhesion strength data of EMC-Silicon chip interface was provided based on shear test with a maximum value of 52 MPa, while the normal strength is just approximately 50% of the shear strength and that is 26 MPa. Thus, the value of maximum shear stress and maximum principal stress at the interface of EMC-Si chip in this study both exceed the adhesion strength.…”

Section: Maximum Von-mises Stressmentioning

confidence: 99%

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Interfacial Delamination Validation on Fan-Out Wafer-Level Package Using Finite Element Method

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Ubando

Gonzaga

2023

SSP

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Fan-out wafer-level package is a very promising packaging technology with good thermal and electrical performance. The fan-out wafer-level package exhibits beneficial features such as low profile, high I/O density, low cost, and efficient computing. The package experiences large temperature variations in the assembly phase which causes internal stresses. In particular, the mismatch between the coefficient of thermal expansion of the epoxy molding compound and the substrate due to the cool down phase of the cure process causes the internal stresses in the package. These internally induced stresses result to interfacial delamination. In this study, the interfacial delamination on a fan-out wafer-level package right after post mold cure of glass wafer was evaluated using the stress-based damage index through the finite element analysis in the ANSYS software package. The model was validated by comparing the simulation result of the glass wafer warpage to the existing experimental result from literature. From the warpage simulation of the glass wafer, the region on the package with high stress level was located and examined which may cause interfacial delamination. The maximum shear stress and principal stress at the epoxy molding compound and the Silicon chip interface was found to exceed the adhesion strength. This indicates that the interfacial delamination is inevitable. The information obtained from the stress analysis of molded wafer provides insight for the possible interfacial failure of fan-out wafer-level package in the individual package when subjected to thermomechanical loads.

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Section: Methodsmentioning

confidence: 99%

Section: Maximum Von-mises Stressmentioning

confidence: 99%

Interfacial Delamination Validation on Fan-Out Wafer-Level Package Using Finite Element Method

Conversion

Ubando

Gonzaga

2023

SSP

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“…The transient moisture-induced stress analysis was performed as a coupled temperature displacement analysis. 21,30,31 First, assuming that there is no heat or temperature source in the material, the equation of the temperature field is as follows…”

Section: Simulation Computing Methodsmentioning

confidence: 99%

“…The transient moisture-induced stress analysis was performed as a coupled temperature displacement analysis. 21,30,31…”

Section: Moisture Induced Stressesmentioning

confidence: 99%

An experimental and finite element simulation study of moisture absorption in an ordered PVAF-reinforced thermoplastic starch composite film

Zhang

Guo

et al. 2022

Polymers and Polymer Composites

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A two-dimensional (2D) model was established by the finite element method to study the transient hygroscopic process and moisture-induced stress to better understand the moisture absorption microscopic process of ordered polyvinyl alcohol fiber (PVAF)-reinforced thermoplastic starch (TPS) composite films and the corresponding moisture-induced stress. The Mises stress contour of moisture distribution at five time points (36, 68, 100, 176, and 348 h) under four relative humidities (RH=57%, 75%, 84%, 98%) is demonstrated. The variation in moisture content along the two paths of width (AB) and thickness (CD) in the 2D model and the moisture-induced stress were also studied in detail. The results show that when the time t is 348 h, the saturated moisture contents along CD are 5.27, 17.22, 30.58, and 59.14%, and along AB are 5.27, 17.19, 30.57, and 59.07%. In addition, the change in moisture content, regardless of whether the path was AB or CD, mainly occurred before 176 h. The simulation results of moisture absorption are in good agreement with the experimental results. The ultimate moisture-induced stress is the largest in the fiber surroundings, which are 0.398, 1.30, 2.31, and 4.48 MPa at four RHs, respectively, and the internal moisture stress of 4.48 MPa was within the tensile strength (2–6 MPa) of PVAF/TPS (PVAF <0.89 vt%), which resulted in composite film failure. This paper provides a new way to understand the moisture absorption mechanism and explore possible methods for improving the water-resistance of TPS films.

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“…Factors such as surface tension, viscosity, extrusion membrane damping and residual stress have become important factors affecting the performance and reliability of MEMS devices [2,3] . Among them, the residual stress has a serious impact on the packaging [4] , bonding [5,6,7] and thin film layer [8,9,10,11] of MEMS devices. Residual stress mainly comes from the following four aspects: thermal stress, lattice mismatch, internal stress, and plastic stress [12] .…”

Section: Introductionmentioning

confidence: 99%

Finite element simulation and experiment of residual stress evolution in MEMS structures

Wen,

Chen,

Huang

et al. 2024

J. Phys.: Conf. Ser.

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The MEMS device structure is usually formed by the combination of thick film and thin film deposition of many different materials, and the residual stress generated in the process of integration/superposition of different materials has a significant impact on the performance and reliability of the device.In this study, a test structure of a multilayer thin film was designed and processed. Based on this, finite element modeling analysis and reliability experiment, analyze the evolution of residual stress and construct the corresponding theoretical analysis model. The finite element modeling analysis can characterize the evolution and distribution laws of residual stress. The reliability experiment is mainly by carrying out the temperature shock experiment, and measuring the resistance value, resonance frequency and the surface morphology of the device, so as to better reflect the change of residual stress. Through this study, the resonant frequency and surface morphology of the device can reflect the residual stress of the device, which provides help for the test and analysis of the residual stress. To a certain extent, it can help reduce the harm caused by the residual stress in the design and manufacturing process, and improve the performance and reliability of MEMS devices.

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Finite element analysis of moisture induced thermo-mechanical delamination of semiconductor packages considering in-situ moisture desorption during reflow process

Cited by 7 publications

References 19 publications

Interfacial Delamination Validation on Fan-Out Wafer-Level Package Using Finite Element Method

Interfacial Delamination Validation on Fan-Out Wafer-Level Package Using Finite Element Method

An experimental and finite element simulation study of moisture absorption in an ordered PVAF-reinforced thermoplastic starch composite film

Finite element simulation and experiment of residual stress evolution in MEMS structures

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