2020
DOI: 10.1016/j.matpr.2019.11.024
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Finite element analysis of polysilicon based MEMS temperature-pressure sensor

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Cited by 7 publications
(5 citation statements)
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“…This approach is considered enough for simulating phenomena of interest through finite element analysis (FEA), associated to contact, potential, and dynamics [31]. Moreover, the use FEA tools for MEMS devices such as FSR has been a helpful for plenty of research tasks [32][33][34]. Figure 5 shows four versions of this model, which is very similar to the one shown in Figure 1.…”
Section: Simplified "Four-particle Model" For Finite Element Analysismentioning
confidence: 99%
“…This approach is considered enough for simulating phenomena of interest through finite element analysis (FEA), associated to contact, potential, and dynamics [31]. Moreover, the use FEA tools for MEMS devices such as FSR has been a helpful for plenty of research tasks [32][33][34]. Figure 5 shows four versions of this model, which is very similar to the one shown in Figure 1.…”
Section: Simplified "Four-particle Model" For Finite Element Analysismentioning
confidence: 99%
“…This is 3 to 4 times lower than that found in silicon single crystals [9]. Conventional piezoresistive microsensors utilize one or two active diaphragm resistors and non-pressure-sensitive reference resistors on the wafer [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…The finite element modeling used in this work is an effective tool for the design and analysis of engineering structures, including strain sensors [ 10 ] and a polysilicon-based temperature pressure sensor [ 11 ]. It was also coupled with the finite volume method for the analysis and design of electrothermal MEMS actuators [ 12 ].…”
Section: Introductionmentioning
confidence: 99%