Finite Element Method (FEM) Study on Space Charge Effects in Organic Light Emitting Diodes (OLED)

Abstract

Abstract-In this paper, we present a finite element method (FEM) study on the space charge effects in organic light emitting diodes. The physical model covers all the key physical processes in OLEDs, namely charge injection, transport and recombination, exciton diffusion, transfer and decay as well as light coupling, and thin-film-optics. The exciton model includes generation, diffusion, and energy transfer as well as annihilation. We assumed that the light emission originates from oscillation which thus is embodied as exciton in a stack of multilayer. We discuss the accumulation of charges at internal interfaces and their signature in the transient response as well as the electric field distribution. We also report our investigation on the influence of the insertion of the emission layer (EML) in the bilayer structure.

Enhancement of Radiative Recombination by Different Indium Composition of Multiple Quantum Barriers in GaN-Based Light-Emitting Diodes

“…InGaN/GaN light-emitting diodes (LEDs) grown on sapphire substrate have recently become a favorable choice for applications in solid-state lighting. There has been steady improvement in material quality and device fabrication such as organic light-emitting diode (OLED), 1) solar cell 2,3) so that GaN-based LEDs are now starting to enter general lighting applications. An advantage of LED lighting technologies is its high efficiency.…”