Finite element modeling of a microelectronic structure under uniform thermal loading

Effect of low-k dielectric on stress and stress-induced damage in Cu interconnects

“…Although the interfacial sliding and diffusional creep may play a role on relaxing the shear stress in the interconnects, the calculated shear stress was not as large as conventional Al/ oxide systems [40]. Moreover, the interfacial sliding predicted by FEA [41] and observed experimentally [42] is limited to unpassivated Cu/low-k lines in which the top surfaces are exposed not passivated by dielectric materials and surface diffusion can occur substantially. Therefore, the deformation in the via would be dominated by compressive stress along the surface normal rather than localized shear stress at the vicinity of interface in the real interconnect structures.…”

Simulation of thermal stress in magnetron sputtered thin coating by finite element analysis

“…Most of these studies are done for thick coating deposited mainly by thermal spraying. Thermal stress simulation using FEA in thin coating is often performed in wafer processing technology [15] to test the wafer reliability. There are very few studies of thermal stress modelling in thin hard coating for mechanical applications [16][17][18].…”

Externally constrained plastic flow in miniaturized metallic structures: A continuum-based approach to thin films, lines, and joints

“…Therefore, their influence on the plastic deformation in Cu can be quite different. There have been limited finite element analyses reported on single-level infinitely long Cu lines and polymer-based (or low-modulus) dielectric structures with different focuses [281,288,[296][297][298]. It was shown that the triaxial stress field in Cu is relatively insensitive to its aspect ratio, and a significant part of the tensile stress arises from the stiff barrier layers surrounding the Cu line [288].…”