Finite Element Simulation and Sensitivity Analysis of the Cohesive Parameters for Delamination Modeling in Power Electronics Packages

Mirone, Giuseppe; Barbagallo, Raffaele; Bua, Giuseppe; La Rosa, Guido

doi:10.3390/ma16134808

Cited by 3 publications

(4 citation statements)

References 26 publications

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“…This method allows us to determine the energy release rate of the crack without requiring the direct measurement of the crack size during testing. Instead, an equivalent crack length (a eq ) is calculated from the specimen's compliance (C) (Equation ( 3)) and then used in Equation (1). The data are used to determine the critical fracture energy, and it is later applied in Equation ( 1), where G is the modulus of the specimen, E f is the flexural modulus (obtained from Equation ( 2)), P is the load, h is the thickness of the substrate, and B is the width of the specimen [16].…”

Section: Testing Proceduresmentioning

confidence: 99%

“…As mentioned, delamination is a crucial challenge in power electronics packages, exerting a considerable influence on their reliability and performance. This impact is particularly pronounced due to the substantial thermomechanical loads generated by the latest devices handling large amounts of electrical power [ 1 ]. Analyzing potential weak points in multimaterial components involves calculating fracture energy using concepts from fracture mechanics [ 2 ].…”

Section: Introductionmentioning

confidence: 99%

“…As the properties of the bimaterial interfaces considered for this study have not yet been thoroughly analyzed and obtained, a CZM method is preferred. The finite element (FE) modeling approach was employed by Mirone et al [ 1 ] for delamination analysis in power electronics packages. Their study includes guidelines for calibration and utilizes a global–local approach with a bilinear cohesive zone model (CZM).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Cohesive Properties of Bimaterial Interfaces in Semiconductors: Experimental Study and Numerical Simulation Using an Inverse Cohesive Contact Approach

Adler,

Morais,

Akhavan-Safar

et al. 2024

Materials

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Examining crack propagation at the interface of bimaterial components under various conditions is essential for improving the reliability of semiconductor designs. However, the fracture behavior of bimaterial interfaces has been relatively underexplored in the literature, particularly in terms of numerical predictions. Numerical simulations offer vital insights into the evolution of interfacial damage and stress distribution in wafers, showcasing their dependence on material properties. The lack of knowledge about specific interfaces poses a significant obstacle to the development of new products and necessitates active remediation for further progress. The objective of this paper is twofold: firstly, to experimentally investigate the behavior of bimaterial interfaces commonly found in semiconductors under quasi-static loading conditions, and secondly, to determine their respective interfacial cohesive properties using an inverse cohesive zone modeling approach. For this purpose, double cantilever beam specimens were manufactured that allow Mode I static fracture analysis of the interfaces. A compliance-based method was used to obtain the crack size during the tests and the Mode I energy release rate (GIc). Experimental results were utilized to simulate the behavior of different interfaces under specific test conditions in Abaqus. The simulation aimed to extract the interfacial cohesive contact properties of the studied bimaterial interfaces. These properties enable designers to predict the strength of the interfaces, particularly under Mode I loading conditions. To this extent, the cohesive zone modeling (CZM) assisted in defining the behavior of the damage propagation through the bimaterial interfaces. As a result, for the silicon–epoxy molding compound (EMC) interface, the results for maximum strength and GIc are, respectively, 26 MPa and 0.05 N/mm. The second interface tested consisted of polyimide and silicon oxide between the silicon and EMC layers, and the results obtained are 21.5 MPa for the maximum tensile strength and 0.02 N/mm for GIc. This study’s findings aid in predicting and mitigating failure modes in the studied chip packaging. The insights offer directions for future research, focusing on enhancing material properties and exploring the impact of manufacturing parameters and temperature conditions on delamination in multilayer semiconductors.

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Section: Testing Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Cohesive Properties of Bimaterial Interfaces in Semiconductors: Experimental Study and Numerical Simulation Using an Inverse Cohesive Contact Approach

Adler,

Morais,

Akhavan-Safar

et al. 2024

Materials

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show abstract

“…Therefore, several researchers have adopted numerical simulation methods to characterize the mechanical properties of interfaces. The cohesive zone modeling (CZM) method proposed by Dugdale [ 8 ] and Barenblatt [ 9 ] is the most popular method and has been widely used to address interface problems involving different structures [ 10 , 11 , 12 , 13 ].…”

Section: Introductionmentioning

confidence: 99%

Using Machine Learning and Finite Element Analysis to Extract Traction-Separation Relations at Bonding Wire Interfaces of Insulated Gate Bipolar Transistor Modules

Zhao,

An,

Wang

et al. 2024

Materials

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For insulated gate bipolar transistor (IGBT) modules using wire bonding as the interconnection method, the main failure mechanism is cracking of the bonded interface. Studying the mechanical properties of the bonded interface is crucial for assessing the reliability of IGBT modules. In this paper, first, shear tests are conducted on the bonded interface to test the bonded interface’s strength. Then, finite element–cohesive zone modeling (FE-CZM) is established to describe the mechanical behavior of the bonded interface. A novel machine learning (ML) architecture integrating a convolutional neural network (CNN) and a long short-term memory (LSTM) network is used to identify the shape and parameters of the traction separation law (TSL) of the FE-CZM model accurately and efficiently. The CNN-LSTM architecture not only has excellent feature extraction and sequence-data-processing abilities but can also effectively address the long-term dependency problem. A total of 1800 sets of datasets are obtained based on numerical computations, and the CNN-LSTM architecture is trained with load–displacement (F–δ) curves as input parameters and TSL shapes and parameters as output parameters. The results show that the error rate of the model for TSL shape prediction is only 0.186%. The performance metric’s mean absolute percentage error (MAPE) is less than 3.5044% for all the predictions of the TSL parameters. Compared with separate CNN and LSTM architectures, the proposed CNN-LSTM-architecture approach exhibits obvious advantages in recognizing TSL shapes and parameters. A combination of the FE-CZM and ML methods in this paper provides a promising and effective solution for identifying the mechanical parameters of the bonded interfaces of IGBT modules.

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Thermal-structural Modeling of power electronic package: effects of deposition geometry and dry spot on the stress distributions

Mirone,

Barbagallo,

Bua

et al. 2024

IOP Conf. Ser.: Mater. Sci. Eng.

Self Cite

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A Power Electronics package is a heterogeneous system made of semiconductor devices (dies), metallic-ceramic substrate, baseplate and encapsulating material. The electronic devices can be MOSFETs (Metal Oxide Semiconductors Field Effect Transistors), diodes, IGBTs (Insulated Gate Bipolar Transistors) and passive components such as capacitors, resistors and sensors integrated on support circuit; the complete set of semiconductor devices installed on a package form the so-called “power modulus”. These devices play an important role in the transmission and conversion of energy in electric and hybrid vehicles. Due to the elevated currents and, consequently, the elevated temperatures at which these systems work, and due to the mismatch of the thermal-mechanical properties of the materials from which they are made, stresses and strains develop within the devices. Such stresses can be locally concentrated and amplified, depending on the deposition geometry of the various layers constituting the semiconductor device. Edge termination structures are essential to decrease the electric field at die’s edges, and, including brittle compounds in their composition, like Si3N4 or SiO, they are quite sensitive to mechanical stress. Another reason that may cause the stresses concentrations is the presence of dry spots. Dry spots are areas of various size, located at the interface between die or leadframe and the encapsulating resin, where there is a total or partial lack of adhesion. The aims of this work are, mainly, two. At first, four linear finite element analyses have been performed in order to evaluate the stresses concentrations at the corners of edge termination structure. The first case concerns sharp corners and the other cases concern differently filleted corners. In the second part of this work, it has been analysed the dry spot effect on stress distributions. Due to the small size of the defect with respect to the whole package, a Global-Local FEM approach has been used, creating a local subdomain where the mesh is denser than the global domain and a running a further separate numerical analysis which takes its boundary conditions from the global analysis, so delivering reliable small-scale stress and strain gradients. This approach permits to achieve accurate analyses focused on zones of interest of the global domain, limiting the increase of the computational cost of the modelling.

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Finite Element Simulation and Sensitivity Analysis of the Cohesive Parameters for Delamination Modeling in Power Electronics Packages

Cited by 3 publications

References 26 publications

Cohesive Properties of Bimaterial Interfaces in Semiconductors: Experimental Study and Numerical Simulation Using an Inverse Cohesive Contact Approach

Cohesive Properties of Bimaterial Interfaces in Semiconductors: Experimental Study and Numerical Simulation Using an Inverse Cohesive Contact Approach

Using Machine Learning and Finite Element Analysis to Extract Traction-Separation Relations at Bonding Wire Interfaces of Insulated Gate Bipolar Transistor Modules

Thermal-structural Modeling of power electronic package: effects of deposition geometry and dry spot on the stress distributions

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