Finite element simulations of compositionally graded InGaN solar cells

Brown, Gregory; Ager, Joel W.; Walukiewicz, W.; Wu, Junqiao

doi:10.1016/j.solmat.2009.11.010

Cited by 205 publications

(129 citation statements)

References 39 publications

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“…More recently, approaches involving metamorphic graded buffers such as GaAsP and SiGe have gained a lot of attention for III-V/Si tandem solar cells (Grassman, Carlin, and Ringel 2010;Dimroth et al 2014;Diaz et al 2014;Yaung, Lang, and Lee 2014). Additional heteroepitaxial integration approaches, which in comparison to the previously mentioned techniques have been less extensively explored, include -(i) lattice-matched dilute nitride (GaAsPN) solar cells on Si substrate (Geisz et al 2005;Almosni et al 2013;Yamane et al 2014) and (ii) lattice-mismatched InGaN based solar cells (Ager et al 2008;Brown et al 2010;Tran et al 2012) on Si substrate. The most critical challenges associated with heteroepitaxial integration of III-V materials on Si substrate are highlighted as follows:…”

Section: Heteroepitaxial Approach For Iii-v-on-si Integrationmentioning

confidence: 99%

“…Using finite element analysis, Jain et al showed that a 2J InGaP/GaAs solar cell on Si could achieve efficiency in excess of 29% (AM1.5g -1,000 W/m 2 , 1 sun) (Jain and Hudait 2013) and 33% (AM1.5d -900 W/m 2 , 600 suns) (Jain and Hudait 2014) at a realistic TDD of 10 6 cm −2 . Using a similar finite element analysis modeling approach, Brown et al showed that a 2J InGaN/Si tandem cell could achieve an efficiency of 28.9% under AM1.5 illumination (Brown et al 2010). Triple-junction InGaP/GaAs// Si solar cells have also been numerically investigated as a function of TDD under 1 sun Wilkins et al 2013;) and concentrated sunlight .…”

Section: Iii-v and Si Solar Cell Design And Challengesmentioning

confidence: 99%

“…Using simple analytical simulations taking into account realistic diffusion lengths, an efficiency of~30% (1 sun) is expected for 2J InGaN/Si p/n solar cell, while 3J InGaN (1.9 eV)/InGaN (1.5 eV)/Si solar cell are predicted to be exhibited efficiency of~35% (1 sun) (Hsu and Walukiewicz 2008). The grading of the InGaN absorber layer close to the top heterointerface (pGaN/n-InGaN) in a p/n InGaN/Si tandem solar cell is expected to boost the performance as it removes the barrier for hole transport (Brown et al 2010).…”

Section: Lattice-mismatched Ingan-on-simentioning

confidence: 99%

“…The difficulty in doping InN material with p-type dopant is presumably due to the compensation by native defects. Utilizing p-GaN/n-In x Ga 1-x N heterojunction is one of the ways to avoid the use of p-doped In x Ga 1-x N material, wherein the GaN layer also serves as a window layer and reduces the surface recombination (Brown et al 2010). However, theoretical efficiency of such GaN/ InGaN heterojunction is limited to 11% for 1J devices due to the polarization effects, which impede the carrier collection (Fabien et al 2014).…”

Section: Lattice-mismatched Ingan-on-simentioning

confidence: 99%

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III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain

Hudait

2014

Energy Harvesting and Systems

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Achieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of~25%, III-V compound semiconductor based solar cells have steadily shown performance improvement at~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III-V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III-V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III-V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III-Von-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III-V multijunction solar cells on Si are reviewed. Different technological routes for integrating III-V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III-V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III-V solar cell efficiencies, the future prospects for successful integration of III-V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

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Section: Heteroepitaxial Approach For Iii-v-on-si Integrationmentioning

confidence: 99%

Section: Iii-v and Si Solar Cell Design And Challengesmentioning

confidence: 99%

Section: Lattice-mismatched Ingan-on-simentioning

confidence: 99%

Section: Lattice-mismatched Ingan-on-simentioning

confidence: 99%

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III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain

Hudait

2014

Energy Harvesting and Systems

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“…3 The material has a larger peak electron velocity, larger saturation velocity, higher breakdown voltage, and thermal stability, making it highly suitable for use as a channel material in microwave power devices. 4,5 Applications of InGaN include LEDs, laser diodes, [6][7][8] solar cells, [9][10][11] and photodetectors. Much interest has been focused on InGaN/GaN multi quantum wells (MQWs) because of their utility as the active layer in high-brightness III-nitride LEDs and continuous-wave (CW) blue-green laser diodes (LDs).…”

Section: Introductionmentioning

confidence: 99%

Macroscopic Polarization Effect on Bowing Constant of Thermal Parameters of In x Ga1−x N

Gedam

Pansari

Sahoo

2015

Journal of Elec Materi

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In this work, we have investigated theoretically the effect of macroscopic polarization [sum of spontaneous (SP) and piezoelectric (PZ) polarization] on various physical parameters of In x Ga 1Àx N alloy. The macroscopic polarization contributes to the effective elastic constants of In x Ga 1Àx N alloy. This modifies the phonon group velocity, Debye temperature, and Debye frequency of the alloy. These thermal parameters are estimated as a function of In composition. Our calculation shows that these material parameters are enhanced and vary nonlinearly with In composition, i.e., show bowing. The cause of bowing is the nonlinear dependence of the spontaneous and piezoelectric polarization on composition. The bowing constant of each material parameter (with and without polarization) is also theoretically predicted by the best-fit method. The results show that the polarization mechanism not only enhances the parameters but also contributes significantly to the bowing constant. The macroscopic polarization contributes more than 25% to the bowing constant. The obtained results can be used to predict the effect of the polarization mechanism on the thermoelectric properties of In x Ga 1Àx N alloy.

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Photovoltaics and Energy Conversion Devices

2023

Group III‐Nitride Semiconductor Optoelectronics

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Finite element simulations of compositionally graded InGaN solar cells

Cited by 205 publications

References 39 publications

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Macroscopic Polarization Effect on Bowing Constant of Thermal Parameters of In x Ga1−x N

Photovoltaics and Energy Conversion Devices

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