Finite size and intrinsic field effect on the polar-active properties of ferroelectric-semiconductor heterostructures

Morozovska, Anna N.; Eliseev, Eugene A.; Svechnikov, S. V.; Krutov, A. D.; Shur, V. Ya.; Borisevich, Albina Y.; Maksymovych, Peter; Kalinin, Sergei V.

doi:10.1103/physrevb.81.205308

Cited by 59 publications

(48 citation statements)

References 40 publications

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“…The analysis in this case is similar to that of Morozovska et al 10 Under zero applied field, as L increases, solutions 1 and 3 above involve higher and higher potentials and eventually reach regime II. There are three possible solutions:…”

Section: A Low Dopingsupporting

confidence: 77%

“…Zubko et al 8 modified the coefficients of the Devonshire-Ginzburg-Landau theory and introduced the notion of effective polarization to account for space charges. Recently, Baudry,9 using a discrete approach, as well as Morozovska et al, 10 extending the Devonshire-Ginzburg-Landau, have developed a coupled field theory of space charges and polarization, but make a priori assumptions on the space charge distribution when studying specific problems. Gureev et al 11 have studied head-to-head domain walls, while Eliseev et al 12 and Maksymovych et al 13 have studied static and dynamic conductivity of domain walls.…”

Section: Introductionmentioning

confidence: 99%

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Effect of doping on polarization profiles and switching in semiconducting ferroelectric thin films

Shenoy

Xiao

Bhattacharya

2012

Journal of Applied Physics

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This paper proposes a theory to describe the polarization and switching behavior of ferroelectrics that are also wide-gap semiconductors. The salient feature of our theory is that it does not make any a priori assumption about either the space charge distribution or the polarization profile. The theory is used to study a metal-ferroelectric-metal capacitor configuration, where the ferroelectric is n-type doped. The main result of our work is a phase diagram as a function of doping level and thickness that shows different phases, namely, films with polarization profiles that resemble that of undoped classical ferroelectrics, paraelectric, and a new head-to-tail domain structure. We have identified a critical doping level, which depends on the energy barrier in the Landau energy and the built-in potential, which is decided by the electronic structures of both the film and the electrodes. When the doping level is below this critical value, the behavior of the films is almost classical. We see a depleted region, which extends through the film when the film thickness is very small, but is confined to two boundary layers near the electrodes for large film thickness. When the doping level is higher than the critical value, the behavior is classical for only very thin films. Thicker films at this doping level are forced into a tail-to-tail configuration with three depletion layers, lose their ferroelectricity, and may thus be described as nonlinear dielectric or paraelectric. For films which are doped below the critical level, we show that the field required for switching starts out at the classical coercive field for very thin films, but gradually decreases.

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Section: A Low Dopingsupporting

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Effect of doping on polarization profiles and switching in semiconducting ferroelectric thin films

Shenoy

Xiao

Bhattacharya

2012

Journal of Applied Physics

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“…234,[385][386][387] In parallel, the properties of spatially separated ferroelectric-semiconductor systems were explored as driven by FeFET and FeRAM applications. [388][389][390][391][392][393] Much of these results are summarized in an excellent recent review by Hong et al 393 However, recent studies have demonstrated that in ambient conditions the screening is ionic in nature, and hence polarization dynamics at open surfaces should be considered as coupled surface electrochemical-bulk polarization switching process, as discussed in Section IV. Surprisingly the theory for such coupling was developed by Stephenson and Highland only recently, 229 and remained largely unused.…”

Section: Phenomenamentioning

confidence: 99%

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Vasudevan

Balke

Maksymovych

et al. 2017

Applied Physics Reviews

270

206

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Ferroelectric materials have remained one of the foci of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time-and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures, walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems. It can also be anticipated that the recent Nobel prize 1 in molecular electromechanical machines will result in rapid growth in interest in PFM as a method to probe their behavior on single device and device assembly levels. However, the broad introduction of PFM also resulted in a growing number of reports on nearly-ubiquitous presence of ferroelectric-like phenomena including remnant polar states and electromechanical hysteresis loops in materials which are non-ferroelectric in the bulk, or in cases where size effects are expected to suppress ferroelectricity. While in certain cases plausible physical mechanisms can be suggested, there is remarkable similarity in observed behaviors, irrespective of the materials system. In this review, we summarize the basic principles of PFM, briefly discuss the features of ferroelectric surfaces salient to PFM imaging and spectroscopy, and summarize existing reports on ferroelectric-like responses in non-classical ferroelectric materials. We further discuss possible mechanisms behind observed behaviors, and possible experimental strategies for their identification.3

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“…49,50 ). The geometry of the problem is shown in Figure 4a, and corresponding constitutive equations are described in Supplementary Information.…”

mentioning

confidence: 99%

Direct observation of ferroelectric field effect and vacancy-controlled screening at the BiFeO3/LaxSr1−xMnO3 interface

et al. 2014

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Finite size and intrinsic field effect on the polar-active properties of ferroelectric-semiconductor heterostructures

Cited by 59 publications

References 40 publications

Effect of doping on polarization profiles and switching in semiconducting ferroelectric thin films

Effect of doping on polarization profiles and switching in semiconducting ferroelectric thin films

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Direct observation of ferroelectric field effect and vacancy-controlled screening at the BiFeO3/LaxSr1−xMnO3 interface

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