Finite-size effects in bismuth nanowires

Li, Kai; Chien, C. L.; Searson, Peter C.

doi:10.1103/physrevb.58.r14681

Cited by 155 publications

(124 citation statements)

References 19 publications

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“…Recently, during the course of our exploration of the fabrication of Bi nanowire arrays into nanoporous templates, 22,23 in which electrodeposition is the only viable method, we have found electrodeposition to be a superior deposition method for fabricating high quality Bi thin films. 20,21 After further processing, these electrodeposited films become single-crystals Bi thin films, in which we have observed enormous MR effects of as much as 400 000% at low temperatures and 300% at room temperature, and pronounced Shubnikov-de Haas ͑S-dH͒ oscillations.…”

Section: Introductionmentioning

confidence: 99%

Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)

Chien

Yang

et al. 2000

Journal of Applied Physics

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Section: Introductionmentioning

confidence: 99%

Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)

Chien

Yang

et al. 2000

Journal of Applied Physics

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“…The study of these effects and their dependence on crystal direction can be carried out on different nanostructured systems. Although there are some works on nanowires [16][17] , thin films represent a better starting point as only one dimension is reduced. In addition, thin films are more compatible with standard processing techniques, which would eventually allow the integration of Bi films in devices.…”

Section: Introductionmentioning

confidence: 99%

Mixed Effects of the Atomic Arrangement and Surface Chemistry on the Electrodeposition of Bi Thin Films on n-GaAs Substrates

et al. 2016

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We have studied the electrodeposition of Bi thin films on two GaAs orientations with different atomic arrangement and chemical composition, (110) and (111)B. The electrochemical properties of each substrate have been analyzed by means of cyclic voltammetries and current transients. Then, x-ray diffraction has been used to determine the crystal structure and quality of the Bi films, and atomic force microscopy images have provided information about the surface morphology. Finally, the Bi/GaAs interface has been electrically characterized by means of capacitance-voltage and current-voltage curves. In this study, we have been able to discriminate between the effect of surface chemistry and the arrangement of surface atoms. The former has a direct effect on the reduction process of Bi(III) ions and on the electrical properties of the Bi/GaAs interface, whereas the atoms arrangement at the substrate surface determines the texture and morphology of the Bi films.3

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“…Recently we have successfully fabricated both Bi nanowires 10,11 and single-crystal thin films 12,13 by electrodeposition. The films exhibit very large MR effects, showing as much as a 3800-fold ͑or 380 000%͒ increase in the resistance at low temperatures and a 2.5-fold ͑250%͒ increase at room temperature with a nonhysteretic and quasilinear field dependence.…”

Section: Introductionmentioning

confidence: 99%