2005
DOI: 10.1103/physrevb.71.092406
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Finite-size shift of the Curie temperature of ferromagnetic lanthanum cobaltite thin films

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Cited by 42 publications
(32 citation statements)
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“…This intercluster magnetotransport effect thus provides a simple probe of the existence of nanoscopic MEPS, a fact which played a key role in our recent study [13] of the degradation in magnetization and conductivity in SrTiO 3 (001)/La 1-x Sr x CoO 3 films [27,28]. This system was found to enter a suppressed magnetization state below a thickness, t*, of about 80 Å at x = 0.5, coincident with a crossover from metallic-like to insulating-like transport.…”
mentioning
confidence: 91%
“…This intercluster magnetotransport effect thus provides a simple probe of the existence of nanoscopic MEPS, a fact which played a key role in our recent study [13] of the degradation in magnetization and conductivity in SrTiO 3 (001)/La 1-x Sr x CoO 3 films [27,28]. This system was found to enter a suppressed magnetization state below a thickness, t*, of about 80 Å at x = 0.5, coincident with a crossover from metallic-like to insulating-like transport.…”
mentioning
confidence: 91%
“…[10] However, the finite size and strain effects are intrinsic to the film, and it is not trivial to separate the influence of these two effects on a particular film. Recently, Fuchs et al [11] and Andres et al [12] have reported the finite thickness effect for the perovskite oxide films, La 0.7 Sr 0.3 CoO 3 and La 0.7 Ca 0.3 MnO 3 , respectively. However, the possible effects of strain were discounted in the analysis.…”
mentioning
confidence: 99%
“…The best fits for the resistivity data were found for the VRH model (130 K < T < 18 K) as well as for the Efros-Shklovskii model (310 K < T < 149 K). VRH takes place in disordered systems where charge carriers move by hopping between localized electronic states and its validity is evidenced on cobaltites [6,8,9]. One can note (see inset of Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Such a difference could be ascribed to (i) significantly compressed ab plane and tensile strained lattice along the c-axis, and (ii) appearance of a shear stress in layer regions located far from the substrate surface, due to lattice relaxation (like in Ref. [9]). In order to elucidate the conduction mechanism we have fit to ρ vs. T data (see Table) the generalized formula for activated hopping model, where ρ is given by ρ = exp(T 0 /T ) 1/n .…”
Section: Resultsmentioning
confidence: 99%
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