2019
DOI: 10.1016/j.cam.2018.06.041
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Finite volume schemes for multilayer diffusion

Abstract: This paper focusses on finite volume schemes for solving multilayer diffusion problems. We develop a finite volume method that addresses a deficiency of recently proposed finite volume/difference methods, which consider only a limited number of interface conditions and do not carry out stability or convergence analysis. Our method also retains second-order accuracy in space while preserving the tridiagonal matrix structure of the classical single-layer discretisation. Stability and convergence analysis of the … Show more

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Cited by 15 publications
(13 citation statements)
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“…The time‐dependent percentage change in resistance of the Mg test structure, Δ R = ( h 0 / h − 1) × 100%, depends on the initial thickness h 0 and remaining thickness h , as obtained in the same manner as in the single‐layer model (see Experimental Section). The film–Mg contact transfer coefficient (defined in Experimental Section), [ 34,35 ] H film‐Mg = (2.0 ± 0.3) × 10 −11 cm s −1 , follows from experimentally measured changes in the resistance of Mg structures protected by 1‐layer SiON‐PA films in PBS at 37 °C (Figure 4B). The SiON–SiON contact transfer coefficient, [ 34,35 ] H SiON‐SiON = (3.0 ± 0.2) × 10 −11 cm s −1 , follows from similar measurements of resistance but protected by 3‐layer SiON‐PA films (Figure 4C).…”
Section: Resultsmentioning
confidence: 99%
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“…The time‐dependent percentage change in resistance of the Mg test structure, Δ R = ( h 0 / h − 1) × 100%, depends on the initial thickness h 0 and remaining thickness h , as obtained in the same manner as in the single‐layer model (see Experimental Section). The film–Mg contact transfer coefficient (defined in Experimental Section), [ 34,35 ] H film‐Mg = (2.0 ± 0.3) × 10 −11 cm s −1 , follows from experimentally measured changes in the resistance of Mg structures protected by 1‐layer SiON‐PA films in PBS at 37 °C (Figure 4B). The SiON–SiON contact transfer coefficient, [ 34,35 ] H SiON‐SiON = (3.0 ± 0.2) × 10 −11 cm s −1 , follows from similar measurements of resistance but protected by 3‐layer SiON‐PA films (Figure 4C).…”
Section: Resultsmentioning
confidence: 99%
“…The film–Mg contact transfer coefficient (defined in Experimental Section), [ 34,35 ] H film‐Mg = (2.0 ± 0.3) × 10 −11 cm s −1 , follows from experimentally measured changes in the resistance of Mg structures protected by 1‐layer SiON‐PA films in PBS at 37 °C (Figure 4B). The SiON–SiON contact transfer coefficient, [ 34,35 ] H SiON‐SiON = (3.0 ± 0.2) × 10 −11 cm s −1 , follows from similar measurements of resistance but protected by 3‐layer SiON‐PA films (Figure 4C). With these parameters, the water concentration in 1‐layer (Figure 4D) and 3‐layer (Figure 4E) SiON‐PA films after soaking in PBS at 37 °C for 10, 30, and 60 days, can be calculated.…”
Section: Resultsmentioning
confidence: 99%
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“…As Eqs. → 0) [4,13,21], we consider only Type A conditions in the analysis presented in this section.…”
Section: Characteristic Timescales For Multilayer Diffusionmentioning
confidence: 99%