First contact-charging of gold nanoparticles by electrostatic force microscopy

Prime, Dominic; Paul, Shashi

doi:10.1063/1.3300731

Cited by 12 publications

(13 citation statements)

References 18 publications

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“…too. [ 91 ] Prime and Paul [ 92 ] further demonstrated the role of the nanoparticle by investigating the charging process using electrostatic force microscopy (EFM). These measurements were closely associated with the AFM measurements conducted by Ouyang et al.…”

Section: History: Materials and Mechanismsmentioning

confidence: 99%

“…Prime and Paul [ 92 ] aimed the experiment to confirm that there wasn't any contribution from the polymer in the trapping process. Hence a planar gap cell structure was fabricated to study the exclusive contribution of the nanoparticle in the charging process.…”

Section: History: Materials and Mechanismsmentioning

confidence: 99%

“…Raman analysis of the fullerene molecule evidenced charge transfer through a peak shift. But this system was further simplified by Prime and Paul [ 92 ] when the gold nanoparticle charging was demonstrated when a bias was applied by an EFM tip and the charge retention of the nanoparticle was investigated. These results, demonstrated that the internal field model was a valid hypothesis and required due investigation to understand the change in conductivity phenomenon.…”

Section: Charge Trapping Mechanismmentioning

confidence: 99%

“…The feasibility of using nanoparticles as memory devices was confirmed by Leong et al too. [91] Prime and Paul [92] further demonstrated the role of the nanoparticle by investigating the charging process using electrostatic force microscopy (EFM). These measurements were closely associated with the AFM measurements conducted by Ouyang et al [77] In these measurements the AFM images were taken after an electrical potential was applied across the electrodes of a device.…”

Section: History: Materials and Mechanismsmentioning

confidence: 99%

“…The devices fabricated by Saranti et al [99,100] demonstrated multiple capacitance states that existed one within the other, thereby b) after applying a +10 V bias, and the image c) after applying −10 V. Reproduced with permission. [92] Copyright 2010, AIP Publishing.…”

Section: History: Materials and Mechanismsmentioning

confidence: 99%

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To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices

Paul

2022

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Organic memory devices are a rapidly evolving field with much improvement in device performance, fabrication, and application. But the reports have been disparate in terms of the material behavior and the switching mechanisms in the devices. And, despite the advantages, the lack of agreement in regards to the switching behavior of the memory devices is the biggest challenge that the field must overcome to mature as a commercial competitor. This lack of consensus has been the motivation of this work wherein various works are compiled together to understand influencing factors in the memory devices. Different works are compared together to discover some clues about the nature of the switching occurring in the devices, along with some missing links that would require further investigation. The charge storage mechanism is critically analyzed alongside the various resistive switching mechanisms such as filamentary conduction, redox‐based switching, metal oxide switching, and other proposed mechanisms. The factors that affect the switching process are also analyzed including the effect of nanoparticles, the effect of the choice of polymer, or even the effect of electrodes on the switching behavior and the performance parameters of the memory device.

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Section: History: Materials and Mechanismsmentioning

confidence: 99%

Section: History: Materials and Mechanismsmentioning

confidence: 99%

Section: Charge Trapping Mechanismmentioning

confidence: 99%

Section: History: Materials and Mechanismsmentioning

confidence: 99%

Section: History: Materials and Mechanismsmentioning

confidence: 99%

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To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices

Paul

2022

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Organic and Macromolecular Memory – Nanocomposite Bistable Memory Devices

Paul¹

2022

Advances in Semiconductor Technologies

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Non‐Zero and Open‐Loop Current–Voltage Characteristics in Electronic Memory Devices

Paul,

Nama Manjunatha,

Paul

2023

Adv Elect Materials

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This work focuses on the non‐zero‐crossing and open‐loop current–voltage (I–V) characteristics of electronic memory devices that are studied and focused on primarily for non‐volatile memory storage applications. Gold nanoparticles‐based devices are fabricated to understand possible non‐crossing zero and open‐loop current–voltage behavior, where a non‐zero current and open loop I–V characteristics are observed at zero voltage. While other studies have attributed this behavior as a “battery effect”, this study presents an alternate perspective for non‐redox‐based charge storage memory devices. The electrical measurements clearly demonstrate that the non‐zero current and open‐loop characteristics are due to the charge trapping of the gold nanoparticles. The charge accumulation within the nanoparticle is observed to create a non‐zero potential within the device and thereby encouraging such behavior, even though the applied external voltage is zero. The longstanding mystery in deciphering if electrical measurements or the charge storage device contributes toward non‐zero property is unfurled in this article. A possible charge storage model is proposed and further verified using liquid crystals‐based two terminal devices. The presence of internal potential leads to an offset within the devices, a non‐zero current and open‐loop I–V even when the external applied voltage is zero.

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First contact-charging of gold nanoparticles by electrostatic force microscopy

Cited by 12 publications

References 18 publications

To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices

To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices

Organic and Macromolecular Memory – Nanocomposite Bistable Memory Devices

Non‐Zero and Open‐Loop Current–Voltage Characteristics in Electronic Memory Devices

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