First Demonstration of heterogenous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT)

Tong, Hong; Chang, Wen Hsin; Agarwal, Ajay; Huang, Yun Wen; Yang, Cheng-Ying; Chu, Ting-Ching; Chao, Hsin-Yu; Chuang, Yen; Chung, Sheng-Ti; Lin, Jyi-Tsong; Luo, Shen-Ming; Tsai, Chia‐Chang; Li, M.-J.; Yu, Xueyang; Lin, Nathan C.; Cho, T.-C.; Sung, Po-Jung; Su, Chun-Jung; Luo, Guang-Li; Hsueh, Fu-Kuo; Lin, Kuei-Huei; Ishii, Hiroyuki; Irisawa, Toshifumi; Maeda, Tatsuro; Wu, Chien-Ting; C.-Y., W.; Lu, Darsen D.; Kao, Kuo-Hsing; Lee, Y.-J.; Chen, H. J.-H.; Lin, Chao‐Hsu; Chuang, Ricky W.; Huang, Kun-Ping; Samukawa, Seiji; Li, Yuewen; Tarng, Jenn‐Hwan; Chao, Tien−Sheng; Miura, Makoto; Huang, Guo Wei; Wu, Wen−Fa; Li, J.-Y.; Shieh, Jia‐Min; Wang, Y.-H.; Yeh, Wen–Kuan

doi:10.1109/iedm13553.2020.9372001

Cited by 12 publications

(8 citation statements)

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“…Those defects tend to reduce while the growth thickness increases. 5) If a thicker Ge layer is grown on AlAs, the epitaxial Ge layer can separate into two parts: the defective Ge part near the AlAs/Ge interface and highquality crystalline Ge near the surface. After the ELO process, the defective Ge part can be exposed to the surface.…”

Section: Resultsmentioning

confidence: 99%

“…Over the past 10 years, the evolution of M3D integration has thriven and a sophisticated fabrication process has been reported, such as utilizing high mobility channel materials, 1) importing advanced FinFET 2) and gate-allaround (GAA) structures. [3][4][5][6] Ge-on-Insulator (GeOI) structures have been considered as a suitable platform for next-generation M3D integration because of better short channel control than conventional bulk substrates, less complexity of forming GAA structures, and, most important of all, the low processing temperature of Ge-based devices. 7,8) The thermal process of top devices should not deteriorate the bottom devices and the interconnects, which is the bottleneck of the current M3D integration scheme.…”

Section: Introductionmentioning

confidence: 99%

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Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure

Chang¹,

Wan²,

Cheng³

et al. 2022

Jpn. J. Appl. Phys.

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Germanium-on-Insulator (GeOI) structures with the surface orientation of (111) have been successfully fabricated by using low thermal budget epitaxial-lift-off (ELO) technology via direct bonding and selective etching. The material characteristics and transport properties of the Ge(111)OI structure have been systematically investigated through secondary-ion mass spectrometry, Raman spectroscopy, X-ray diffraction, high-resolution transmission electron microscope, and Hall measurement. The transferred Ge (111) layer remained almost intact from the as-grown epitaxial layers, indicating the benefits of ELO technology. The low thermal budget ELO technology demonstrated in this work is promising to integrate Ge channels with different surface orientations on Si (100) substrates for future monolithic 3D applications.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure

Chang¹,

Wan²,

Cheng³

et al. 2022

Jpn. J. Appl. Phys.

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“…With respect to plasmaenhanced ALE, these techniques can be classified into ion energy assisted etch methods to directionally etch Si, SiO 2 , Si 3 N 4 , and organic polymers. Neutral-beam-enhanced ALE (NBALE) has attracted attention as one method to address the challenges of atomic precision plasma processing because of eliminating the incidence of charged particles and UV photons on the substrate [65,66]. These attributes enable precise nanoprocessing, while suppressing the formation of defects at the atomic layer level.…”

Section: Current and Future Challengesmentioning

confidence: 99%

“…These attributes enable precise nanoprocessing, while suppressing the formation of defects at the atomic layer level. Sub 6 nm Fin-FETs produced in this way are shown in figure 8(a) and for a 3/2 nm heterogeneous complementary-FET in figure 8(b) [65,66]. Especially, 3 and 2 nm generation devices require bonding of heterogeneous channel materials (for example, Si/Ge, Si/GaN).…”

Section: Current and Future Challengesmentioning

confidence: 99%

The 2022 Plasma Roadmap: low temperature plasma science and technology

Adamovich

Agarwal

Ahedo

et al. 2022

J. Phys. D: Appl. Phys.

266

139

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The 2022 Roadmap is the next update in the series of Plasma Roadmaps published by Journal of Physics D with the intent to identify important outstanding challenges in the field of low-temperature plasma (LTP) physics and technology. The format of the Roadmap is the same as the previous Roadmaps representing the visions of 41 leading experts representing 21 countries and five continents in the various sub-fields of LTP science and technology. In recognition of the evolution in the field, several new topics have been introduced or given more prominence. These new topics and emphasis highlight increased interests in plasma-enabled additive manufacturing, soft materials, electrification of chemical conversions, plasma propulsion, extreme plasma regimes, plasmas in hypersonics, data-driven plasma science and technology and the contribution of LTP to combat COVID-19. In the last few decades, LTP science and technology has made a tremendously positive impact on our society. It is our hope that this roadmap will help continue this excellent track record over the next 5–10 years.

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“…Currently, 3D ultra-scaled Ge channels such as Ultrathin-Body Ge-on-Insulator (UTB-GeOI), [4][5][6] Ge nanowire, [7][8][9] and Ge nanosheet FETs 10,11) have gained much attention. However, the fabrication of 3D channel structures is more complicated than the conventional planar channel structures because the 3D channel consists of different surface orientations.…”

Section: Introductionmentioning

confidence: 99%

Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases

Ishii¹,

Chang²,

Ishii³

et al. 2022

Jpn. J. Appl. Phys.

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The effect of HI and O2 plasma treatments on Ge surface is studied by X-ray photoelectron spectroscopy. Ge oxide on Ge surface can be effectively removed at room temperature by remote HI plasma in inductively coupled plasma reactive ion etching system without substrate bias. The re-oxidation of oxide-free HI plasma-treated Ge has been performed sequentially by O2 plasma. By utilizing HI and O2 plasma treatment cyclically, we have proved the viability of Ge digital dry etching. Ge digital dry etching by controlling the plasma power and the processing time of HI and O2 plasma treatments will be the building block for achieving Ge atomic layer etching.

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First Demonstration of heterogenous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT)

Cited by 12 publications

References 0 publications

Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure

Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure

The 2022 Plasma Roadmap: low temperature plasma science and technology

Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases

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