First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering

Yu, X.-R.; Chang, Wen Hsin; Hong, T.-C.; Sung, Po-Jung; Agarwal, A.; Luo, Guang-Li; Wu, Chien-Ting; Kao, Kuo-Hsing; Su, Chun-Jung; Chang, Stock; Lu, W.-H.; Fu, Ping-Wen; Lin, Jyi-Tsong; Wu, Pin-Han; Cho, T.-C.; Yu, Wei‐Ren; Lu, Darsen D.; Chung, Fa‐Po; Maeda, Tatsuro; Lee, Y.-J.; Wu, Wen−Fa; Yeh, Wen–Kuan; Wang, Y.-H.

doi:10.1109/vlsitechnologyandcir46769.2022.9830316

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 2022

DOI: 10.1109/vlsitechnologyandcir46769.2022.9830316

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First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering

X.-R. Yu

Wen Hsin Chang

T.-C. Hong

et al.

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First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering

Cited by 3 publications

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