First experimental demonstration of solid state circuit breaker (SSCB) using 650V GaN-based monolithic bidirectional switch

Shen, Z. John; Miao, Zhenyu; Roshandeh, Aref Moradkhani; Moens, P.; Devleeschouwer, Herbert; Salih, Ali; Padmanabhan, Balaji; Jeon, Woochul

doi:10.1109/ispsd.2016.7520782

Cited by 20 publications

(6 citation statements)

References 6 publications

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“…However, SSCBs have the disadvantage of presenting high power losses, and being very expensive and large, due to the need for heat sinks [21]. Another group of SSCBs is the devices proposed since 1989 [65], in which the predominant material is a wide band gap (WBG), such as SiC JFETs [66], SiC ETO [67], SiC MOSFETs [68,69], SiC SITs [70], GaN HEMTs, and GaN MOSFETs [15]. WBG semiconductors exhibit superior material properties than silicon ones, which enable the operation of power devices at higher-temperature operation, higher blocking voltage capability, and higher switching frequencies [34,71].…”

Section: Sscbs General Descriptionmentioning

confidence: 99%

“…The authors in the Ref. [15] experimentally demonstrated the feasibility of using 650 V GaN bidirectional devices in SSCB applications. GaN devices outperform silicon MOSFETs with regard to the on-resistance value during operation (Rds) versus the breakdown voltage, allowing a further increase in switching frequency and efficiency, and reduction in physical size.…”

Section: Recent Developments Of Sscbsmentioning

confidence: 99%

“…However, CS-MCTs are presented as a candidate for DCMG protection, with very good results. WGB SSCBs are continuously evolving as an alternative to replace Si SSCBs: SiC ETO [67] (2016), SiC MOSFET [69,81] (2010, 2016), SiC JFECT [66,68] (2011, 2016, 2020), SiC SIT [70] (2014), and GaN FET [15,80] (2016, 2019).…”

Section: Cb Evolutionmentioning

confidence: 99%

“…DCMGs are composed of sources that are driven by power electronics devices. These devices, under certain operative conditions, may handle currents between two and three times the nominal current for at least tens of microseconds [14,15], while conventional AC sources can sustain a fault current greater than 20 times their nominal current for hundreds of milliseconds [16]; in consequence, the protective devices used for ACMGs do not fulfill the minimal requirements for DCMGs. The proliferation of DCMGs is an important step in making the future power system load-adaptive, an important requirement for DG.…”

Section: Introductionmentioning

confidence: 99%

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Circuit Breakers in Low- and Medium-Voltage DC Microgrids for Protection against Short-Circuit Electrical Faults: Evolution and Future Challenges

et al. 2021

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This paper deals with circuit breakers (CBs) used in direct current microgrids (DCMGs) for protection against electrical faults, focusing on their evolution and future challenges in low voltage (<1.5 kV) and medium voltage (between 1.5 kV and 20 kV). In recent years, proposals for new circuit-breaker features have grown. Therefore, a review on the evolution of circuit breakers for DCMGs is of utmost importance. In general terms, this paper presents a review concerning the evolution of circuit breakers used in DCMGs, focusing on fuses, mechanical circuit breakers (MCBs), solid-state circuit breakers (SSCBs), and hybrid circuit breakers (HCBs). Their evolution is presented highlighting the advantages and disadvantages of each device. It was found that although modern circuit breakers have begun to be commercially available, many of them are still under development; consequently, some traditional fuses and MCBs are still common in DCMGs, but under certain restrictions or limitations. Future challenges that would allow a successful and adequate implementation of circuit breakers in DCMGs are also presented.

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Section: Sscbs General Descriptionmentioning

confidence: 99%

Section: Recent Developments Of Sscbsmentioning

confidence: 99%

Section: Cb Evolutionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Circuit Breakers in Low- and Medium-Voltage DC Microgrids for Protection against Short-Circuit Electrical Faults: Evolution and Future Challenges

et al. 2021

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“…Minimum conduction losses, as well as high current fault clearing in the µs scale, were obtained (i.e., interruption of 306 A in 1.2 µs). Furthermore, in [12], the design of a GaNbased switch rated at 45 A for both 380 V DC and 230 V AC grids is presented, along with its thermal analysis, to provide the temperature rise for various operating conditions.…”

Section: Introductionmentioning

confidence: 99%

On the Design of a GaN-Based Solid-State Circuit Breaker for On-Board DC Microgrids

Fountoukidis,

Rigogiannis,

Voltsis

et al. 2024

Ciees 2023

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MODULATION DOPED FETs

Ding,

Zhu,

Ferreyra

et al. 2024

Encyclopedia of RF and Microwave Engineering

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Conventional modulation‐doped field‐effect transistors (MODFETs) with unprecedented performance, for example, a power gain of 15 dB at 190–235 GHz and a noise level of 1.2 dB with 7.2‐dB gain in the 90‐GHz range, have been demonstrated. Passivation process is of fundamental importance in the stability, good performance, and extension of device operative lifetime. We discuss strategies used to passivate the surface of GaAs and related compounds and GaN in the context of FETs. Recent research on the enhancement‐mode PMODFET (E‐PMODFET) variety for applications in high‐speed and low‐power digital circuits and power amplifiers with single power supply is described. Reliability of MOSFET based on GaAs is reviewed to some extent. Scalability issues as well as progress in FinFET‐based on InGaAs channel are summarized. Also to be noted is that III–V compound semiconductors as an alternative to Si as the channel material to improve the performance of metal‐oxide–semiconductor field‐effect transistors (MOSFETs) on Si platforms are a very attractive option for the next‐generation high‐speed integrated circuits but face serious challenges because of the lack of a high‐quality and natural insulator.III‐Nitride‐based HFETs showed tremendous performance in both high‐power RF and power‐switching applications. AlGaN/GaN‐based high‐power HFETs on SiC substrate with 60‐nm gate lengths have achieved maximum oscillation frequency of 300 GHz. On‐resistance of 1.1–1.2 Ω mm as well as drain current of ∼0.9 A/mm was also achieved. For HFET devices operated in class AB mode on GaN semiinsulating substrates, a continuous‐wave power density of 9.4 W/mm was obtained with an associated gain of 11.6 dB and a power‐added efficiency of 40% at 10 GHz. III‐Nitride devices for power‐switching application have achieved near‐theoretical limit for vertical devices‐based GaN native substrates and breakdown voltage as high as 1200 V and on‐resistance as low as 9 mΩ‐cm2for lateral HFET devices on low‐cost silicon substrates. Because of the much larger 2DEG density in lattice‐matched InAlN/GaN HFETs, drain current as high as 2 A/mm was demonstrated, and the highest current gain cutoff frequency of 370 GHz was also reported on 7.5‐nm‐thick In0.17Al0.83N barrier HFETs. The very low on‐resistance allows high drain current, but it is subject to the junction temperature the devices can tolerate and is also restricted by the thermal expansion mismatch of the GaN‐on‐Si structures. Normally‐on and Normally‐off GaN HFETs with breakdown voltages in the range of 20–900 V are already commercially available. However, their competitivity against Si‐based IGBT and super junction MOSFETs and SiC‐FETs would depend on several factors such as voltage derating (used voltage versus the breakdown voltage), long‐term reliability, and cost.The advent of high‐quality SiGe layers on Si substrates has paved the way for the exploration and exploitation of heterostructure devices in an Si environment. MODFETs based on the Si/SiGe have been achieved with extraordinaryp‐channel performance. With 0.25‐μm gate lengths, the current gain cutoff frequency is about 40 GHz. When the gate length was reduced to 0.1 μm, the current gain cutoff frequency increased to about 70 GHz. MODFETs based on Ga2O3, especially β‐Ga2O3, have attracted a good deal of interests by the potential high breakdown voltage of Ga2O3but suffer from limitations imposed by both low electron mobility (affects efficiency and loss) and low thermal conductivity, hindering heat dissipation.

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First experimental demonstration of solid state circuit breaker (SSCB) using 650V GaN-based monolithic bidirectional switch

Cited by 20 publications

References 6 publications

Circuit Breakers in Low- and Medium-Voltage DC Microgrids for Protection against Short-Circuit Electrical Faults: Evolution and Future Challenges

Circuit Breakers in Low- and Medium-Voltage DC Microgrids for Protection against Short-Circuit Electrical Faults: Evolution and Future Challenges

On the Design of a GaN-Based Solid-State Circuit Breaker for On-Board DC Microgrids

MODULATION DOPED FETs

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