First Iteration Communications Circuit for a Long-Lived In-situ Solar System Explorer (LLISSE)

Jordan, Jennifer L.; Ponchak, George E.; Neudeck, Philip G.; Spry, David J.

doi:10.1109/aero47225.2020.9172708

Cited by 3 publications

(1 citation statement)

References 17 publications

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“…These applications are capable of performing as ultrasound transducers for non-destructive evaluation and non-destructive testing in high-temperature environments [ 1 , 2 , 3 ]. Hence, the materials capable of being utilized in these applications have achieved significant attention, especially in the field of space exploration (solar system), where the working conditions remain very harsh, such as temperatures of 460 °C (Venus) [ 4 , 5 ]. Nowadays, dielectric capacitors have also attracted much consideration in the form of ceramics and thin films to demonstrate rapid charge–discharge rates and an improved energy-storage density.…”

Section: Introductionmentioning

confidence: 99%

Influence of Mn Ions’ Insertion in Pseudo-Tetragonal Phased CaBi4Ti4O15-Based Ceramics for Highly Efficient Energy Storage Devices and High-Temperature Piezoelectric Applications

Hussain

Jabeen

Hassan

et al. 2022

IJMS

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In the present era of advanced technology, the surge for suitable multifunctional materials capable of operating above 300 °C has increased for the utilization of high-temperature piezoelectric devices. For this purpose, a pseudo-tetragonal phased CaBi4Ti3.98 (Nb0.5Fe0.5)0.02O15:xwt%MnO2 (CBTNF:xMn), with x = 0–0.20, ceramic system has been engineered for the investigation of structural, ferroelectric, dielectric and high-temperature-dependent piezoelectric properties. XRD analysis confirms that low-content Mn-ion insertion at the lattice sites of CBTNF does not distort the pseudo-tetragonal phase lattice of CBTNF:xMn ceramics, but enhances the functional behavior of the ceramic system, specifically at x = 0.15 wt%Mn. Compared to pure CBT and CBTNF ceramics, CBTNF:0.15Mn has demonstrated a highly dense relative density (~96%), a saturated polarization (PS) of 15.89 µC/cm2, a storage energy density (WST) of ~1.82 J/cm3, an energy-conversion efficiency (ƞ) of ~51% and an upgraded piezoelectric behavior (d33) of 27.1 pC/N at room temperature. Sharp temperature-dependent dielectric constant (εr) peaks display the solid ferroelectric behavior of the CBTNF:0.15Mn sample with a Curie temperature (TC) of 766 °C. The thermally stable piezoelectric performance of the CBTNF:0.15Mn ceramic was observed at 600 °C, with just a 0.8% d33 loss (25 pC/N). The achieved results signify that multi-valence Mn ions have effectively intercalated at the lattice sites of the pseudo-tetragonal phased CBTNF counterpart and enhanced the multifunctional properties of the ceramic system, proving it to be a durable contender for utilization in energy-storage applications and stable high-temperature piezoelectric applications.

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Section: Introductionmentioning

confidence: 99%

Influence of Mn Ions’ Insertion in Pseudo-Tetragonal Phased CaBi4Ti4O15-Based Ceramics for Highly Efficient Energy Storage Devices and High-Temperature Piezoelectric Applications

Hussain

Jabeen

Hassan

et al. 2022

IJMS

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Threshold-voltage bias-instability in SiC MOSFETs: effects of stress temperature and level on oxide charge buildup and recovery

Ghosh

Hao

Cook

et al. 2022

Semicond. Sci. Technol.

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In this study we performed slow and fast bias temperature instability (BTI) measurements on n-channel silicon carbide (SiC) MOSFETs. Threshold voltage (Vth) shifts as well as recovery observed during and after stress applied at different temperatures and stress levels were used to understand the dynamics of charge trapping/capture and detrapping/emission at gate oxide defects. It is deduced from the results that no new defects are created by the stress at the levels used in this study and Vth shifts are due to the injected electron capture and trapping at existing oxide border traps. Positive gate-voltage BTI induced Vth shift is observed to follow a power law on stress time with an exponent, n, dependent on stress temperature and level, such that 0.03 ≤ n ≤ 0.09. Electron emission and/or defect interactions are found to proceed with a low activation energy of the order of 0.01 eV and are suggested to be responsible for oxide charge reduction and, consequently, Vth recovery.

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Physical Layer Communications Technologies: Harsh Planetary Environments

2021

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First Iteration Communications Circuit for a Long-Lived In-situ Solar System Explorer (LLISSE)

Cited by 3 publications

References 17 publications

Influence of Mn Ions’ Insertion in Pseudo-Tetragonal Phased CaBi4Ti4O15-Based Ceramics for Highly Efficient Energy Storage Devices and High-Temperature Piezoelectric Applications

Influence of Mn Ions’ Insertion in Pseudo-Tetragonal Phased CaBi4Ti4O15-Based Ceramics for Highly Efficient Energy Storage Devices and High-Temperature Piezoelectric Applications

Threshold-voltage bias-instability in SiC MOSFETs: effects of stress temperature and level on oxide charge buildup and recovery

Physical Layer Communications Technologies: Harsh Planetary Environments

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