First Performance Evaluation of an X-Ray SOI Pixel Sensor for Imaging Spectroscopy and Intra-Pixel Trigger

Ryu, Syukyo G.; Tsuru, Takeshi Go; Nakashima, Shinya; Takeda, Ayaki; Arai, Y.; Miyoshi, T.; Ichimiya, R.; Ikemoto, Y.; Matsumoto, Hironori; Imamura, Teruhiko; Ohmoto, T.; Iwata, Atsushi

doi:10.1109/tns.2011.2160970

Cited by 51 publications

(67 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We also measured the depletion depth of XRPIX-FZ as a function of the back bias voltage according to the method described in [2]. The result is shown in figure1b.…”

Section: Results Of the Evaluation Testmentioning

confidence: 99%

“…The details and the performance of XRPIX1 are reported in [2]. Then, We developed the next device named "XRPIX1-FZ".…”

Section: Novel Pixel Sensor For Future X-ray Astrnomymentioning

confidence: 99%

“…The sensor Si of XRPIX1-FZ has ten times higher resistivity than that of XRPIX1 in order to achieve the full depletion. The other specifications such as the pixel circuit are same as that of XRPIX1 (see [2]). …”

mentioning

confidence: 99%

See 2 more Smart Citations

Evaluation of a SOI pixel sensor with thick depletion layer for future X-ray astronomical missions

Nakashima¹,

Ryu²,

Tsuru³

et al. 2012

AIP Conference Proceedings

View full text Add to dashboard Cite

We report on the evaluation test of our novel pixel sensor named "XRPIX1-FZ" which is developed for the future X-ray astronomy mission. The mean gain of XRPIX1-FZ is 3.3 µV/e − and the dispersion of the gain among the pixels is 1% in the standard deviation. We confirmed the energy resolution of 260 eV in FWHM at 8 keV. We achieved the full depletion (250 µm) at 30 V back bias voltage.Keywords: Imaging spectrometer, Active pixel sensor (APS), Silicon-on-insulator (SOI) PACS: 95.55.Ka NOVEL PIXEL SENSOR FOR FUTURE X-RAY ASTRNOMYFor the detector of the future X-ray astronomy, we have been developing the novel pixel sensor which use the Silicon-On-Insulator (SOI) wafer. The SOI wafer is composed of a thick, high-resistivity Si substrate (sensor part) and a thin, low-resistivity Si layer (CMOS circuit) sandwiching a insulator (SiO 2 ) layer [1]. Each pixel has the intelligent readout circuit and is randomly accessible (i.e. active pixel sensor).We produced the first prototype named XRPIX1 which has the intra-pixel trigger in each pixel. The details and the performance of XRPIX1 are reported in [2]. Then, We developed the next device named "XRPIX1-FZ". The sensor Si of XRPIX1-FZ has ten times higher resistivity than that of XRPIX1 in order to achieve the full depletion. The other specifications such as the pixel circuit are same as that of XRPIX1 (see [2]). RESULTS OF THE EVALUATION TESTWe irradiated XRPIX-FZ with several-energy X-rays and investigated the gain. The mean gain is measured as to be 3.3 µV/e − . The dispersion of the gain among pixels SUZAKU 2011

show abstract

“…We also measured the depletion depth of XRPIX-FZ as a function of the back bias voltage according to the method described in [2]. The result is shown in figure1b.…”

Section: Results Of the Evaluation Testmentioning

confidence: 99%

“…The details and the performance of XRPIX1 are reported in [2]. Then, We developed the next device named "XRPIX1-FZ".…”

Section: Novel Pixel Sensor For Future X-ray Astrnomymentioning

confidence: 99%

See 1 more Smart Citation

Evaluation of a SOI pixel sensor with thick depletion layer for future X-ray astronomical missions

Nakashima¹,

Ryu²,

Tsuru³

et al. 2012

AIP Conference Proceedings

View full text Add to dashboard Cite

show abstract

“…Their noise performance is not yet a match to the examples above, due to the larger pixel capacitance and leakage. However, there are promising R&D avenues to make these sensors applicable to X-ray astronomy [59]. In addition, back-plane post-processing to create a thin entrance window, offering enhanced spectral sensitivity to soft X-rays has been demonstrated [47].…”

Section: Energy Resolutionmentioning

confidence: 99%

R&D paths of pixel detectors for vertex tracking and radiation imaging

Battaglia

Viá

Bortoletto

et al. 2013

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

“…The SOI X-ray detectors have recently been integrated in the direct imaging system [5]. Some progress in this area has been achieved by Miyoshi et al [6][7][8], who studied X-ray astronomy with SOI CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

Design and optimization of collection efficiency and conversion gain of buried p-well SOI pixel X-ray detector

et al. 2017

View full text Add to dashboard Cite

Buried P-Well (BPW) technology was used in silicon-on-insulator pixels (SOIPIX) to suppress the back-gate effect, the major challenge in SOIPIX. In this work, we have designed and optimized two novel pixel structures, which are based on different BPW design layouts, to study the carrier collection efficiency and conversion gain of the pixel unit used in SOIPIX X-ray detectors. The first structure has an extended BPW region connected with a P+ node. In the second structure, a separated BPW ring region is formed surrounding the P+ node. Two X-ray sources with different photon energies have been applied in the simulation of excess carrier generation. The results indicated that the first structure had higher collection efficiency while the second structure had a slightly better conversion gain. As a result, the total photoelectric voltage of the first structure is about two times that of the second structure, where low doping concentration (<1 × 10 16 cm -3 ) in the BPW region is preferred. Such a study of design and optimization of BPW technology is very important for applications in SOIPIX detectors.

show abstract

First Performance Evaluation of an X-Ray SOI Pixel Sensor for Imaging Spectroscopy and Intra-Pixel Trigger

Cited by 51 publications

References 17 publications

Evaluation of a SOI pixel sensor with thick depletion layer for future X-ray astronomical missions

Evaluation of a SOI pixel sensor with thick depletion layer for future X-ray astronomical missions

R&D paths of pixel detectors for vertex tracking and radiation imaging

Design and optimization of collection efficiency and conversion gain of buried p-well SOI pixel X-ray detector

Contact Info

Product

Resources

About