First-principle investigations of cove edged GaN nanoribbon for nanoscale resonant tunneling applications

Kharwar, Saurabh; Singh, Sangeeta; Jaiswal, Neeraj K.

doi:10.1016/j.ssc.2021.114486

Cited by 18 publications

(6 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For the bare Cove-AlN-Cove, striking metallic behavior irrespective of the nanoribbon width is noticed as illustrated in figure 3(b). Similar metallic behavior is also observed for cove-edge GaNNR [3]. The dangling bonds on the nanoribbon's unpassivated edges are what cause the metallic characteristic.…”

Section: Electronic Propertiessupporting

confidence: 72%

“…In our present reported computations, the E g changes from 3.96 to 3.63 eV due to the effect of quantum confinement [4,27]. As compared to H-GaN-H, the E g of H-AlN-H is found to be higher [3].…”

Section: Electronic Propertiesmentioning

confidence: 49%

“…Owing to the redistribution of charge density at the saturated Al edge, H-AlN-Cove followed by H-AlN-H shows lower negative E b . The E b of the considered cove-edge AlNNR is observed to be lower than cove-edge GaNNR, which indicates the higher stability of cove-edge AlNNR [3]. Furthermore, the determined E Form of all nanostructures investigated is provided in table 2.…”

Section: Structural Propertiesmentioning

confidence: 99%

“…Recently, the cove-edge GaNNRs are found to be thermodynamically stable and exhibit semiconductor to metal transition. Moreover, the NDR effect is observed in cove-edge GaNNR-based two-probe devices with a maximum value of 25.01 [3]. The synthesis method, electronic and transport properties of coveedge GNR and GaNNR indicate the possibilities to tailor the electronic properties by introducing cove-edge in AlNNR.…”

Section: Introductionmentioning

confidence: 95%

“…Two-dimensional (2D) nanomaterials have gotten immense attention due to their prospective uses in nanoelectronics since the discovery of graphene in 2004 [1]. In condensedmatter physics, graphene's exceptional physical properties and quantum confinement effects motivated researchers to look into two-dimensional materials beyond graphene such as nitride-based 2D materials [2][3][4][5] and oxide-based 2D materials [6][7][8] respectively. 2D-aluminum nitride has been the subject of much theoretical and practical research in recent years (AlN).…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Hydrogenated cove-edge aluminum nitride nanoribbons for ultrascaled resonant tunneling diode applications: a computational DFT study

2023

Self Cite

View full text Add to dashboard Cite

While synthesizing quasi-one-dimensional nanoribbons, there is a ﬁnite probability that edges have cove-edge defects. Further, the electronic properties of atomically thin two-dimensional (2D) materials can be tailored via the cove-edge which can be deployed for ultrascaled nanodevices. Using density functional theory (DFT) and non-equilibrium Green’s function (NEGF), the structural, electrical, and transport features of cove-edge aluminum nitride nanoribbons (AlNNR) are investigated. The impact of the cove-edge on prospective ultra-scaled device applications is investigated on the nitrogen (N), aluminum (Al), and both edges. Unlike the semiconducting zigzag AlNNRs, the cove-edge AlNNRs are structurally stable and metallic. In partial edge hydrogenated cove-edged AlNNR-based nanodevices with two terminals, a negative diﬀerential resistance (NDR) in the order of 107 is observed. These ﬁndings suggest that cove-edge AlNNR could be used in future nanoelectronics applications such as resonant tunnel diodes (RTDs), memory, and switches.

show abstract

Section: Electronic Propertiessupporting

confidence: 72%

Section: Electronic Propertiesmentioning

confidence: 49%

Section: Structural Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Hydrogenated cove-edge aluminum nitride nanoribbons for ultrascaled resonant tunneling diode applications: a computational DFT study

2023

Self Cite

View full text Add to dashboard Cite

show abstract

Effect of Defects to Tailor the Structural and Electronic Properties of Zigzag GaN Nanoribbons

Nemu,

Jaiswal

2024

Advcd Theory and Sims

View full text Add to dashboard Cite

In the present manuscript, the effect of vacancy and Stone‐Wales defects (SWD) on the structural and electronic properties of zigzag GaN nanoribbons (ZGaNNR) is investigated. Apart from the conventional SWD ( rotation of formula unit), the rotation of formula unit i.e., Ga–N by and is also considered, which revealed remarkable findings. It is observed that the incorporation of considered defects is an exothermic process and the proposed structures are energetically feasible to be obtained. The considered vacancy defects settled in a magnetic ground state while the SWD always prefer a non‐magnetic state. The observed magnetic state is always stable by more than 400 meV compared to the corresponding non‐magnetic state. Furthermore, N‐vacancy defect is energetically preferred over Ga‐vacancy as well as the SWD. The electronic properties of ZGaNNR are highly influenced by the incorporation of vacancy or SWD. A semiconductor to metallic transition for vacancy defects whereas reduction in the bandgap has been witnessed for SWD. A direct to indirect conversion as well as spin polarization was also noticed in the selected geometries. The findings indicate that apart from tailoring the electronic properties, these defects can also be used for the realization of magnetic semiconductors for potential spintronic applications.

show abstract

Highly efficient Cd-Free ZnMgO/CIGS solar cells via effective band-gap tuning strategy

et al. 2023

View full text Add to dashboard Cite

First-principle investigations of cove edged GaN nanoribbon for nanoscale resonant tunneling applications

Cited by 18 publications

References 48 publications

Hydrogenated cove-edge aluminum nitride nanoribbons for ultrascaled resonant tunneling diode applications: a computational DFT study

Hydrogenated cove-edge aluminum nitride nanoribbons for ultrascaled resonant tunneling diode applications: a computational DFT study

Effect of Defects to Tailor the Structural and Electronic Properties of Zigzag GaN Nanoribbons

Highly efficient Cd-Free ZnMgO/CIGS solar cells via effective band-gap tuning strategy

Contact Info

Product

Resources

About