2020
DOI: 10.1016/j.ijleo.2020.164529
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First principle study of optical properties of Cu doped zincblende GaN for novel optoelectronic applications

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Cited by 12 publications
(5 citation statements)
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“…The maxima appeared due to the inter-band transitions and collective oscillations effects of free electrons. In low energy regimes, the material shows transparency due to multiple reflections [21] and experimental curves ascribed to a similar trend for all compositions which comparable to the already reported work [4]. The free carriers in the structure are the main cause of this change in the reflectivity curves at the lower energy regimes.…”
Section: Optical Propertiessupporting
confidence: 87%
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“…The maxima appeared due to the inter-band transitions and collective oscillations effects of free electrons. In low energy regimes, the material shows transparency due to multiple reflections [21] and experimental curves ascribed to a similar trend for all compositions which comparable to the already reported work [4]. The free carriers in the structure are the main cause of this change in the reflectivity curves at the lower energy regimes.…”
Section: Optical Propertiessupporting
confidence: 87%
“…These values are also in good agreement with that reported in the literature [15,23,24]. Reflectivity (R) is described in terms of reflection of a fraction of electromagnetic waves from the surface of a material and it is ascribed as a significant parameter for evaluation of the optical response of a material [21]. The reflectivity for pure CeO 2 and Zn:CeO 2 as calculated experimentally and theoretically, is presented in figure 12.…”
Section: Optical Propertiessupporting
confidence: 86%
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“…DOSs has been plotted in energy range −5 to 5 eV and contribution of Ga p-states, N p-states, and Zn d-states is clearly observed. Since, the results of PDOS and TDOS for pure GaN have been reported earlier [53,54] so we did not repeat it in the current study. However, for pure GaN, the Ga pd-and N p-states are dominant with smaller contribution of Ga s-and N s-states.…”
Section: Density Of Statesmentioning
confidence: 82%
“…Doping of the GaN with the transition metals [1][2][3] has been studied with great interest as it may bring surprising changes in the electronic and optical properties of host material. The light-matter interaction in terms of the optical constants helps to predict the potential application of the materials for photonic device fabrications.…”
Section: Introductionmentioning
confidence: 99%