“…Recently, the zincblende structure of boron antimonide thin films is also successful syntheses from B/Sb multilayer films which deposited onto silicon substrate [4,5], and several physical properties of this compound were obtained; the optical band gap is about 0.59 eV [5], and a plasmon energy ћω p varied from 15.62 eV to 15.67 eV [4,5]. Furthermore many experimental [6,7] and theoretical works [8][9][10][11][12][13][14][15] have been study structural, elastic, electronic and some other physical properties of boron based pnictides BX (X = P, As and Sb). In the present work, we report an empirical calculation of the longitudinal, transverse and average elastic wave velocities, the Debye temperature, the melting temperature, the thermal conductivity, the linear thermal expansion coefficient and the Grüneisen parameter of two boron based pnictides BX (X = As and Sb).…”