2006
DOI: 10.2320/matertrans.47.2651
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First-Principles Calculation of Point Defects in Uranium Dioxide

Abstract: A first-principles calculation for uranium dioxide (UO 2 ) in an antiferromagnetic structure with four types of point defects, uranium vacancy, oxygen vacancy, uranium interstitial, and oxygen interstitial, has been performed by the projector-augmented-wave method with generalized gradient approximation combined with the Hubbard U correction. Defect formation energies are estimated under lattice relaxation for supercells containing 1, 2, and 8 unit cells of UO 2 . The electronic structure, the atomic displacem… Show more

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Cited by 105 publications
(96 citation statements)
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References 24 publications
(24 reference statements)
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“…A somewhat better agreement is observed within the generalized gradient approximation 26 , i.e. GGA+U 10,[27][28][29] . Note that following Dudarev's calculations, we 55 employed recently the same values of U and J in our study on bulk properties and defects behaviour in UO 2 10 .…”
Section: Computational Detailsmentioning
confidence: 87%
“…A somewhat better agreement is observed within the generalized gradient approximation 26 , i.e. GGA+U 10,[27][28][29] . Note that following Dudarev's calculations, we 55 employed recently the same values of U and J in our study on bulk properties and defects behaviour in UO 2 10 .…”
Section: Computational Detailsmentioning
confidence: 87%
“…For a neutral oxygen interstitial defect, calculated formation energies range from À0.44 to À2.17 eV with no apparent cause for the differences in the methodologies employed. [20][21][22][23][24] To investigate this problem, Dorado et al considered the occupation of f orbitals in bulk UO 2 using both the Liechtenstein and Dudarev DFT + U approaches. 16,17 To further examine this effect, they implemented a methodology to allow them to control which f orbitals were occupied, allowing a search of different orbital occupations.…”
Section: Introductionmentioning
confidence: 99%
“…According to reference II, the U vacancy could be substantially easier formed at T = 0 K than the N vacancy. Notice that the chemical potentials of O and U atoms used in similar defect studies in UO 2 bulk did not reveal the energetic preference for the U-vacancy [50,53]. The defectdefect interaction is not responsible for this effect as Table 3).…”
Section: Number Of Layersmentioning
confidence: 88%