In this paper we establish a monolayer of Mn on W͑110͒ as a model system for two-dimensional itinerant antiferromagnetism. Combining scanning tunneling microscopy ͑STM͒, low-energy electron diffraction, and ab initio calculations performed with the full-potential linearized augmented plane wave method we have studied the structural, electronic, and magnetic properties of a Mn monolayer on W͑110͒. Our experimental results indicate that in spite of the huge tensile strain Mn grows pseudomorphically on W͑110͒ up to a thickness of three monolayers. Intermixing between the Mn overlayer and the W substrate can be excluded. Using these structural data as a starting point for the ab initio calculations of one monolayer Mn on W͑110͒ we conclude that ͑i͒ Mn is magnetic and exhibits a large magnetic moment of 3.32 B , ͑ii͒ the magnetic moments are arranged in a c(2ϫ2) antiferromagnetic order, ͑iii͒ the easy axis of the magnetization is in plane and points along the ͓11 0͔ direction, i.e., the direction along the long side of the ͑110͒ surface unit cell with a magnetocrystalline anisotropy energy of 1.3-1.5 meV, and ͑iv͒ the Mn-W interlayer distance is 2.14 Å. The calculated electronic structure of a Mn monolayer on W͑110͒ is compared with experimental scanning tunneling spectroscopy results. Several aspects are in nice agreement, but one cannot unambiguously deduce the magnetic structure from such a comparison. The proposed two-dimensional antiferromagnetic ground state of a Mn monolayer on W͑110͒ is directly verified by the use of spin-polarized STM ͑SP-STM͒ in the constant-current mode, and an in-plane easy magnetization axis could be confirmed using tips with different magnetization directions. We compare the measurements with theoretically determined SP-STM images calculated combining the Tersoff-Hamann model extended to SP-STM with the ab initio calculation, resulting in good agreement.