2002
DOI: 10.2320/matertrans.43.1439
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First-Principles Calculations of Co Impurities and Native Defects in ZnO

Abstract: First-principles plane-wave pseudopotential calculations have been conducted to investigate Co impurities and native defects associated with oxygen excess in ZnO. The electronic states and formation energies are evaluated using the total energies of supercells. The electronic states indicate that Co impurities are donor-like, while native defects associated with oxygen excess are acceptor-like. Among the native defects, Zn vacancies are likely to be a dominant species in view of the much lower formation energy… Show more

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Cited by 19 publications
(12 citation statements)
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“…One theoretical investigation proposed the formation of Co Zn -native defects in ZnO under an oxygen-rich atmosphere. 33 The decrease in n e with increasing p͑O 2 ͒ was due to an increase in E d following the generation of deep donor levels. Figure 7͑b͒ shows E d and M s at 10 K in Zn-polar Zn 0.94 Co 0.06 O layers as a function of n e at 300 K. A large M s was observed in the high n e regions supplied from shallow donor levels, while an increase in E d was suppressed following FM ordering with a decrease in n e .…”
Section: Correlation With Electrical and Magnetic Propertiesmentioning
confidence: 96%
“…One theoretical investigation proposed the formation of Co Zn -native defects in ZnO under an oxygen-rich atmosphere. 33 The decrease in n e with increasing p͑O 2 ͒ was due to an increase in E d following the generation of deep donor levels. Figure 7͑b͒ shows E d and M s at 10 K in Zn-polar Zn 0.94 Co 0.06 O layers as a function of n e at 300 K. A large M s was observed in the high n e regions supplied from shallow donor levels, while an increase in E d was suppressed following FM ordering with a decrease in n e .…”
Section: Correlation With Electrical and Magnetic Propertiesmentioning
confidence: 96%
“…For ZnO based varistor materials, Co dopant is known as one of the key additives to obtain/improve non-linear I -V characteristics in ZnO varistor [1,2]. Although Co dopant itself cannot be an acceptor [24,28,29], it has been proposed that Co dopant generate DSB by the stabilization of O 00 i [30,31] or V 00…”
Section: Discussionmentioning
confidence: 99%
“…31) An increase in these defects can increase the n-p-n barrier height at the grain-grain boundary interface and lead to an increased barrier to electron transport.…”
Section: Thermoelectric Properties 321 Electronic Transportmentioning
confidence: 99%