2023
DOI: 10.1002/adfm.202310077
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First‐Principles Design of Ohmic FET Devices from 2D Transition Metal Dichalcogenides

Zahra Golsanamlou,
Alessandro Fortunelli,
Luca Sementa

Abstract: A chlorine‐doped ultrathin phase of hafnium disulfide (HfS2) is proposed as an ideal candidate material for 2D field‐effect transistor (FET) device applications, down to the extreme sub‐5 nm miniaturization limit. This transition metal dichalcogenide 2D material is designed to combine features of both a metal and a semiconductor, exhibiting a high electric conductivity comparable with ordinary metals, that can be abruptly cut down via gating due to an energy gap immediately below the Fermi level and its anomal… Show more

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