Using first principle calculations, we study the structural, optical and electronic properties of two-dimensional silicene-like structures of CSi 7 (carbosilicene) and GeSi 7 (germasilicene) monolayers. We show that both CSi 7 and GeSi 7 monolayers have different buckling that promises a new way to control the buckling in silicene-like structures. Carbon impurity decreases the silicene buckling, whereas germanium impurity increases it. The CSi 7 has semiconducting properties with 0.25 indirect band gap, but GeSi 7 is a semimetal. Also, under uniaxial tensile strain, the semiconducting properties of CSi 7 convert to metallic properties which shows that CSi 7 can be used in straintronic devices such as strain sensor and strain switch. There is no important response for GeSi 7 under strain. The GeSi 7 has higher dielectric constant relative to CSi 7 , silicene and graphene and it can be used as a 2D-material in high performance capacitors. Calculation of cohesive and formation energies show that CSi 7 is more stable than GeSi 7 . Furthermore, we investigate the optical properties of these new materials and we show that CSi 7 and GeSi 7 can significantly increase the light absorption of silicene. The obtained results can pave a new route for tuning the electronic and optical properties of silicene like structures for different applications in nanoelectronic devices.