First principles investigation of optical properties of zinc-blende AlxGa1−xAs1−yNy materials

Merabet, Boualem; Abid, Hamza; Sekkal, Nadir

doi:10.1016/j.physb.2010.12.030

Cited by 8 publications

(2 citation statements)

References 31 publications

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“…The main optical properties calculated in the present study are the absorption coefficients α(ω), which are associated with the extinction coefficients k(ω). These can be obtained from the dynamical dielectric response function 49 given by:…”

Section: Methodsmentioning

confidence: 99%

First-principles study of structural, electronic, and optical properties of surface defects in GaAs(001) - β2(2x4)

et al. 2018

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We performed first-principles calculations based on density functional theory (DFT) to investigate the role of point defects in the structural, electronic, and optical properties of the GaAs(001)- β2(2x4). In terms of structural properties, AsGa is the most stable defect structure, consistent with experiments. With respect to the electronic structure, band structures revealed the existence of sub-band and midgap states for all defects. The induced sub-bands and midgap states originated from the redistributions of charges towards these defects and neighboring atoms. The presence of these point defects introduced deep energy levels characteristic of EB3 (0.97 eV), EL4 (0.52 eV), and EL2 (0.82 eV) for AsGa, GaAs, GaV, respectively. The optical properties are found to be strongly related to these induced gap states. The calculated onset values in the absorption spectra, corresponding to the energy gaps, confirmed the absorption below the known bulk band gap of 1.43 eV. These support the possible two-step photoabsorption mediated by midgap states as observed in experiments.

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Section: Methodsmentioning

confidence: 99%

First-principles study of structural, electronic, and optical properties of surface defects in GaAs(001) - β2(2x4)

et al. 2018

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“…We notice a small mismatch (less than 0.48%) between the two semiconductors of InGaNAs/GaAs structures. The lattice mismatch is given by [41]:…”

Section: Volume Optimizationmentioning

confidence: 99%

First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide

Ziane

Bensaad

Ouahrani

et al. 2015

Materials Science in Semiconductor Processing

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Thermoelectric, Magneto-Optic Properties and Magnetocaloric Effect of PbS Doped with Mn2+ Ions

Kadim

Masrour

2023

J Inorg Organomet Polym

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First principles investigation of optical properties of zinc-blende AlxGa1−xAs1−yNy materials

Cited by 8 publications

References 31 publications

First-principles study of structural, electronic, and optical properties of surface defects in GaAs(001) - β2(2x4)

First-principles study of structural, electronic, and optical properties of surface defects in GaAs(001) - β2(2x4)

First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide

Thermoelectric, Magneto-Optic Properties and Magnetocaloric Effect of PbS Doped with Mn2+ Ions

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