We
systematically study the device characteristics of the monolayer
(ML) blue phosphorene metal–oxide semiconductor field-effect
transistors (MOSFETs) by using ab initio quantum-transport simulations.
The ML blue phosphorene MOSFETs show superior performances with ultrashort-channel
length. We first predict the ultrascaled ML blue phosphorene MOSFETs
with proper doping concentration and underlap structures are compliant
with the high-performance (HP) and low-power (LP) requirements of
the International Technology Roadmap for Semiconductors in the next
decade in the aspects of the on-state current, delay time, and power
dissipation. Encouragingly, the performances of the ML blue phosphorene
MOSFETs are superior to that of the MOSFETs based on arsenene, antimonene,
InSe, etc. in terms of the on-state current at similar device size.
We also consider the electron–phonon scattering in 10.2 nm
gate ML blue phosphorene MOSFET. It is found that the on-state current
with the scattering of the blue phosphorene device is degraded by
25.4 and 23.6% for HP and LP applications, which can also fulfill
the HP and LP application target. Therefore, we can deduce that ML
blue phosphorene is an alternative channel material to silicon for
ultrascaled FETs if the large-scale and high-quality blue phosphorene
can be achieved.