First-principles investigation of structural, Raman and electronic characteristics of single layer Ge3N4

Theoretical design of porous dodecagonal germanium carbide (d-GeC) monolayer

“…However, we are aware that recently the porous Ge 3 N 4 monolayer with a non-dangling bond at the pore site has been theoretically predicted and shown to exhibit indirect bandgap semiconducting properties. 18 In addition, it was shown that the band gap of the Ge 3 N 4 monolayer can be tuned by mechanical strain, while the indirect band gap remained unchanged across the strain ranges. In a separate study, a direct bandgap of 5.2 eV has been observed for d-BN monolayer while an octagonal porous BN monolayer exhibits an indirect bandgap of 5.20 eV.…”