First principles investigation of the structural and electronic properties of (110), (110) and (111) growth axis AlN/GaN superlattices

Mehnane, Noureddine; Oukli, Nabila; Oukli, Mimouna

doi:10.1016/j.cjph.2017.06.004

Cited by 4 publications

(3 citation statements)

References 29 publications

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“…To show all the possible optical transitions, we have increased the number of special points in the First BZ up to 600 k-points, with an energy range of up to 20 eV. Figure 6 shows the real and imaginary parts of the dielectric function for SL (1,3), SL (1,5), and SL(1,7) compounds for both growth axis. The occurrence of the peaks in ε 2 (ω) is principally produced through the inter-band or intra-band optical transitions.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…The group III-nitride semiconductors have aroused the interest of experimenters as well as theoreticians [1,29], such as Gallium nitride and indium nitride and their solid solutions are III-V semiconductor that gained significant attention for constructing multi Quantum well based optoelectronic devices: laser diodes and light-emitting diodes [5]. To optimize and exploit the potential of the GaN and InN for further optoelectronics applications and solar cell technology, superlattices (SL s ) are one of the simplest ways to tailor the electronic and optical properties of the materials.…”

Section: Introductionmentioning

confidence: 99%

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First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN)n superlattices

2021

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Based on the full potential linear muffin-tin orbitals (FPLMTO) calculation within density functional theory, we systematically investigate the electronic and optical properties of (100) and (110)-oriented (InN)/(GaN)n zinc-blende superlattice with one InN monolayer and with different numbers of GaN monolayers. Specifically, the electronic band structure calculations and their related features, like the absorption coefficient and refractive index of these systems are computed over a wide photon energy scale up to 20 eV. The effect of periodicity layer numbers n on the band gaps and the optical activity of (InN)/(GaN)n SLs in the both growth axis (001) and (110) are examined and compared. Because of prospective optical aspects of (InN)/(GaN)n such as light-emitting applications, this theoretical study can help the experimental measurements.

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Section: Optical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN)n superlattices

2021

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“…[18] has reported the dispersion of energy band profiles of GaAsBi/GaAs and InGaAsN/GaAs QWs developed on distinct (hhl)-oriented QWs. The structural and electrical features of cubic BN/GaN as well as AlN/GaN super lattices produced in various crystallographic orientations have been studied analytically [19,20]. A comprehensively constrained cubic InGaN QW blue-violet laser as well as an InGaP/GaP QW red laser have indeed undergone crystal orientation-focused optoelectronic investigation [21,22].…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Performance Analysis of InGaAs/InP Laser for Various Crystal Orientations

Mijwil

2022

AJET

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The optoelectronic achievement of a lattice matching InGaAs/InP lateral cavity surface radiating LASER in crystal orientations (100), (110), (111), (113), and (131) is computationally simulated utilising MATLAB by attempting to solve a k.p Hamiltonian of eight-band utilising only a finite difference strategy with spin-orbit linkage. To shift wave-vector k as well as Hamiltonian from traditional (100) plane orientation, tensor plane revolution equations are used. It is demonstrated that optical emission spectrum and crystal plane alignments have a significant correlation. At a carriers injection density of 2.50 x 1018 per cm3, the maximum and minimum gains are measured in the (111) as well as (100) orientations, respectively, with optimum emission wavelengths of 1770.00nm and 1680.00nm. This research will serve as a catalyst for the development of ultra-fast optoelectronic devices with improved performance thanks to the use of non-100 orientation epitaxial layers.

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Theoretical investigation of the structural and electronic properties of BN/GaN superlattices growth along various crystallographic axes

Oukli

Mehnane

Oukli

et al. 2019

Physica E: Low-dimensional Systems and Nanostructures

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First principles investigation of the structural and electronic properties of (110), (110) and (111) growth axis AlN/GaN superlattices

Cited by 4 publications

References 29 publications

First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN)n superlattices

First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN)n superlattices

Optical and Electrical Performance Analysis of InGaAs/InP Laser for Various Crystal Orientations

Theoretical investigation of the structural and electronic properties of BN/GaN superlattices growth along various crystallographic axes

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