First-principles investigation upon H2 and C2H2 adsorptions on the Ag-decorated InN monolayer for gas sensor development

Pi, Shouzhuang; Yang, Tianyu; Zhang, Qiang; Liu, Yun

doi:10.1016/j.comptc.2021.113479

Cited by 5 publications

(1 citation statement)

References 44 publications

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“…(7) Indium nitride (InN) is a group III-V nitride. (8,9) The two-dimensional materials of III-V group compounds exhibit significant tunable bandgap and high stability and have a microstructure similar to that of graphene, which can be considered an analogue of graphene. Among them, InN monolayer films have a hexagonal geometry similar to graphene.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of Adsorption and Gas Sensing Properties of Pt-modified InN for SF6 Decomposition Components

Yue,

Chen,

et al. 2023

Sensors and Materials

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In this study, we propose Pt-modified InN (Pt-InN) as an adsorption and sensing material for typical SF 6 decomposition gases (SO 2 , SOF 2 , and SO 2 F 2 ). On the basis of density functional theory, the adsorption structure, energy, charge transfer, deformed charge density, the total density of states, the partial density of states, and recovery time were discussed and calculated in detail, and the internal mechanism of the entire adsorption process was clarified. Analysis results show that Pt doping can considerably improve the characteristic response of pure InN monolayers to SF 6 decomposition gases. The high adsorption energy indicates a chemical interaction between the Pt-InN monolayer and SO 2 , SOF 2 , and SO 2 F 2 molecules, making Pt-InN a potential candidate material for SF 6 decomposition gas sensors. This study also guides further research on InN as a gas sensor.

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Section: Introductionmentioning

confidence: 99%